JPS55141770A - Method of forming sheath of light emitting diode - Google Patents

Method of forming sheath of light emitting diode

Info

Publication number
JPS55141770A
JPS55141770A JP5013179A JP5013179A JPS55141770A JP S55141770 A JPS55141770 A JP S55141770A JP 5013179 A JP5013179 A JP 5013179A JP 5013179 A JP5013179 A JP 5013179A JP S55141770 A JPS55141770 A JP S55141770A
Authority
JP
Japan
Prior art keywords
light emitting
sheath material
container
emitting diode
sheath
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5013179A
Other languages
Japanese (ja)
Other versions
JPS609663B2 (en
Inventor
Junji Ikeda
Riyuuzou Houchin
Tamotsu Wakahata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP54050131A priority Critical patent/JPS609663B2/en
Publication of JPS55141770A publication Critical patent/JPS55141770A/en
Publication of JPS609663B2 publication Critical patent/JPS609663B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Led Device Packages (AREA)

Abstract

PURPOSE:To provide a light emitting diode having high productivity and quality by filling liquid sheath material of ultraviolet ray curable series in a transparent container and curing the sheath material upon irradiation of ultraviolet rays to form the sheath. CONSTITUTION:Liquid sheath material 3 of ultraviolet ray curable series is filled in a transparent container 5 set on a stationary plate 7, a light emitting element 2 is then bonded thereto, and a column 1 connected with lead wires is inserted into predetermined position thereinto. Thereafter the container is passed through an ultraviolet ray irradiating furnace to cure the sheath material of liquid state. At this time the ultraviolet rays are irradiated from the portion except the opening of the container having the opening on the upper surface such as, for example, from the bottom to the end to absorb the strain due to the curing shrinkage of the material 3 at the opening side.
JP54050131A 1979-04-23 1979-04-23 Method for forming the exterior part of a light emitting diode Expired JPS609663B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP54050131A JPS609663B2 (en) 1979-04-23 1979-04-23 Method for forming the exterior part of a light emitting diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP54050131A JPS609663B2 (en) 1979-04-23 1979-04-23 Method for forming the exterior part of a light emitting diode

Publications (2)

Publication Number Publication Date
JPS55141770A true JPS55141770A (en) 1980-11-05
JPS609663B2 JPS609663B2 (en) 1985-03-12

Family

ID=12850576

Family Applications (1)

Application Number Title Priority Date Filing Date
JP54050131A Expired JPS609663B2 (en) 1979-04-23 1979-04-23 Method for forming the exterior part of a light emitting diode

Country Status (1)

Country Link
JP (1) JPS609663B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0658933A2 (en) * 1993-12-16 1995-06-21 Sharp Kabushiki Kaisha Semiconductor devices and method for manufacturing the same
JPH07335982A (en) * 1994-06-08 1995-12-22 Sharp Corp Semiconductor device and its manufacture

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0658933A2 (en) * 1993-12-16 1995-06-21 Sharp Kabushiki Kaisha Semiconductor devices and method for manufacturing the same
EP0658933A3 (en) * 1993-12-16 1995-12-13 Sharp Kk Semiconductor devices and method for manufacturing the same.
JPH07335982A (en) * 1994-06-08 1995-12-22 Sharp Corp Semiconductor device and its manufacture

Also Published As

Publication number Publication date
JPS609663B2 (en) 1985-03-12

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