JPS55140231A - Manufacture of semiconductor element - Google Patents
Manufacture of semiconductor elementInfo
- Publication number
- JPS55140231A JPS55140231A JP4741879A JP4741879A JPS55140231A JP S55140231 A JPS55140231 A JP S55140231A JP 4741879 A JP4741879 A JP 4741879A JP 4741879 A JP4741879 A JP 4741879A JP S55140231 A JPS55140231 A JP S55140231A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- substrate
- crystal
- etching
- damages
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 5
- 239000013078 crystal Substances 0.000 abstract 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 230000007547 defect Effects 0.000 abstract 2
- 238000001312 dry etching Methods 0.000 abstract 2
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 abstract 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 235000011007 phosphoric acid Nutrition 0.000 abstract 1
- 238000002294 plasma sputter deposition Methods 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 238000001039 wet etching Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Weting (AREA)
Abstract
PURPOSE:To form a highly accurate pattern with the life time of a substrate crystal being maintained, by dry-etching the specified portion of a metal film on the surface of a semiconductor substrate to a specified depth, then, wet-etching the rest of the film. CONSTITUTION:An Al layer 5 is formed through an SiO2 film 4 on an Si substrate in which a diffused layer is formed. A resist mask 6 is applied, and the majority of the area of the Al layer 5 is removed by the dry etching utilizing the plasma sputtering of a mixed gas comprising CCl4 and Ar, and an Al layer 8 is remained. Since the Al layer 8 absorbs the ion impact, damages of the crystal of the substrate 1 are not caused. Since the Al layer is not separated, the potential is not increased even though the layer is charged, and the crystal defects are not induced. Then, the thin layer 8 is wet-etched by H3PO4 and the resist is removed. In this method, the damages and defects of the crystal are not caused, and a highly accurate fine pattern can be obtained without reducing the life time. If the Al layer 5 is grounded, and the substrate 1 is placed on a table 1 whose potential is negative with respect to the ground, a more accurate pattern can be obtained.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4741879A JPS55140231A (en) | 1979-04-18 | 1979-04-18 | Manufacture of semiconductor element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4741879A JPS55140231A (en) | 1979-04-18 | 1979-04-18 | Manufacture of semiconductor element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS55140231A true JPS55140231A (en) | 1980-11-01 |
Family
ID=12774599
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4741879A Pending JPS55140231A (en) | 1979-04-18 | 1979-04-18 | Manufacture of semiconductor element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55140231A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58114433A (en) * | 1981-12-28 | 1983-07-07 | Nec Corp | Dry etching method |
| JPS615574A (en) * | 1984-06-20 | 1986-01-11 | Hitachi Micro Comput Eng Ltd | Manufacture of semiconductor device |
| JPS61280620A (en) * | 1985-06-05 | 1986-12-11 | Nec Corp | Manufacture of semiconductor device |
| JPH0199220A (en) * | 1987-10-13 | 1989-04-18 | Nec Corp | Manufacturing equipment for semiconductor device |
| JPH02268427A (en) * | 1989-04-11 | 1990-11-02 | Tokyo Electron Ltd | Plasma processor |
| JPH04336424A (en) * | 1991-05-13 | 1992-11-24 | Nec Corp | Dry etching method and apparatus |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5352384A (en) * | 1976-10-25 | 1978-05-12 | Hitachi Ltd | Electrode formation method |
-
1979
- 1979-04-18 JP JP4741879A patent/JPS55140231A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5352384A (en) * | 1976-10-25 | 1978-05-12 | Hitachi Ltd | Electrode formation method |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58114433A (en) * | 1981-12-28 | 1983-07-07 | Nec Corp | Dry etching method |
| JPS615574A (en) * | 1984-06-20 | 1986-01-11 | Hitachi Micro Comput Eng Ltd | Manufacture of semiconductor device |
| JPS61280620A (en) * | 1985-06-05 | 1986-12-11 | Nec Corp | Manufacture of semiconductor device |
| JPH0199220A (en) * | 1987-10-13 | 1989-04-18 | Nec Corp | Manufacturing equipment for semiconductor device |
| JPH02268427A (en) * | 1989-04-11 | 1990-11-02 | Tokyo Electron Ltd | Plasma processor |
| JPH04336424A (en) * | 1991-05-13 | 1992-11-24 | Nec Corp | Dry etching method and apparatus |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS55140231A (en) | Manufacture of semiconductor element | |
| JPS57130431A (en) | Manufacture of semiconductor device | |
| JPS55165636A (en) | Manufacture of semiconductor device | |
| JPS55157234A (en) | Manufacture of semiconductor device | |
| JPS5461478A (en) | Chromium plate | |
| JPS5496363A (en) | Electrode forming method for semiconductor device | |
| JPS57155539A (en) | Mask | |
| JPS5666038A (en) | Formation of micro-pattern | |
| JPS5683942A (en) | Plasma etching of poly-crystal semiconductor | |
| JPS57176040A (en) | Preparation of photomask | |
| JPS56138941A (en) | Forming method of wiring layer | |
| JPS5742143A (en) | Manufacture of semiconductor device | |
| JPS55130140A (en) | Fabricating method of semiconductor device | |
| JPS5693331A (en) | Manufacture of semiconductor device | |
| JPS5667927A (en) | Thin film etching method of electronic parts | |
| JPS56150829A (en) | Manufacture of aperture iris | |
| GB1569664A (en) | Etching of grooves in substrates for use in cups devices | |
| JPS5642346A (en) | Manufacture of semiconductor device | |
| JPS5743431A (en) | Manufacture of semiconductor device | |
| JPS5618429A (en) | Minute electrode formation | |
| JPS55150230A (en) | Method of forming metallic pattern for semiconductor device | |
| JPS5656633A (en) | Manufacture of semiconductor element | |
| JPS5633841A (en) | Manufacture of semiconductor device | |
| JPS57104224A (en) | Forming method of insulating thin film | |
| JPS5679446A (en) | Production of semiconductor device |