JPS5513585B2 - - Google Patents

Info

Publication number
JPS5513585B2
JPS5513585B2 JP4133775A JP4133775A JPS5513585B2 JP S5513585 B2 JPS5513585 B2 JP S5513585B2 JP 4133775 A JP4133775 A JP 4133775A JP 4133775 A JP4133775 A JP 4133775A JP S5513585 B2 JPS5513585 B2 JP S5513585B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP4133775A
Other languages
Japanese (ja)
Other versions
JPS51116687A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP50041337A priority Critical patent/JPS51116687A/en
Publication of JPS51116687A publication Critical patent/JPS51116687A/en
Publication of JPS5513585B2 publication Critical patent/JPS5513585B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • H01L27/0233—Integrated injection logic structures [I2L]
    • H01L27/0244—I2L structures integrated in combination with analog structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
JP50041337A 1975-04-07 1975-04-07 Semiconductor integrated circuit device Granted JPS51116687A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50041337A JPS51116687A (en) 1975-04-07 1975-04-07 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50041337A JPS51116687A (en) 1975-04-07 1975-04-07 Semiconductor integrated circuit device

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP56001256A Division JPS6031107B2 (en) 1981-01-09 1981-01-09 Semiconductor integrated circuit device

Publications (2)

Publication Number Publication Date
JPS51116687A JPS51116687A (en) 1976-10-14
JPS5513585B2 true JPS5513585B2 (en) 1980-04-10

Family

ID=12605693

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50041337A Granted JPS51116687A (en) 1975-04-07 1975-04-07 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS51116687A (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5261978A (en) * 1975-11-18 1977-05-21 Matsushita Electric Ind Co Ltd Semiconductor integrated circuit device and its production
JPS5344186A (en) * 1976-10-04 1978-04-20 Toshiba Corp Semiconductor device
IT1088974B (en) * 1977-01-12 1985-06-10 Rca Corp SEMICONDUCTOR STRUCTURE INCLUDING DEVICES FOR LOW VOLTAGE AND HIGH VOLTAGE APPLICATIONS AND METHOD OF PREPARATION OF THE SAME
US4170501A (en) * 1978-02-15 1979-10-09 Rca Corporation Method of making a semiconductor integrated circuit device utilizing simultaneous outdiffusion and autodoping during epitaxial deposition
JPS55134957A (en) * 1979-04-10 1980-10-21 Seiko Instr & Electronics Ltd Semiconductor device
JPS5618460A (en) * 1979-07-23 1981-02-21 Toshiba Corp Semiconductor integrated circuit
JPS5619659A (en) * 1979-07-27 1981-02-24 Hitachi Ltd Manufacture of semiconductor device
JPS5623770A (en) * 1979-08-06 1981-03-06 Toshiba Corp Manufacture of semiconductor device
JPS5690554A (en) * 1979-12-22 1981-07-22 Toshiba Corp Semiconductor device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4940686A (en) * 1972-08-23 1974-04-16
JPS5010586A (en) * 1973-05-25 1975-02-03
JPS54156A (en) * 1977-06-01 1979-01-05 Kubota Ltd Operation device of mechanical stopless speed change device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4940686A (en) * 1972-08-23 1974-04-16
JPS5010586A (en) * 1973-05-25 1975-02-03
JPS54156A (en) * 1977-06-01 1979-01-05 Kubota Ltd Operation device of mechanical stopless speed change device

Also Published As

Publication number Publication date
JPS51116687A (en) 1976-10-14

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