JPS55130895A - Single crystal preparing method and apparatus therefor - Google Patents
Single crystal preparing method and apparatus thereforInfo
- Publication number
- JPS55130895A JPS55130895A JP3548379A JP3548379A JPS55130895A JP S55130895 A JPS55130895 A JP S55130895A JP 3548379 A JP3548379 A JP 3548379A JP 3548379 A JP3548379 A JP 3548379A JP S55130895 A JPS55130895 A JP S55130895A
- Authority
- JP
- Japan
- Prior art keywords
- crystal
- diameter
- picking
- grown
- molten liquid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
PURPOSE: To enhance the reproducibility of a crystal shape and obtain a single crystal with stable quality by a mechanism wherein, in case of preparing a single crystal by a Czochralski method, a diameter of an interface of a grown crystal and a molten liquid is monitored to measure the changing ratio of a diameter and a crystal growing condition is controlled.
CONSTITUTION: In case of picking up a single crystal, seed crystal 19 is attached to a chuck portion 18 of a lower end of a picking up shaft 4 and the lower end thereof is immersed within a molten liquid 9 and a crystal is grown on a seed crystal 19 while a picking up shaft 4 is gradually raised. A grown crystal 10 is gradually thicken by changing a picking up speed and a temp. of a molten liquid 9 and a shoulder portion 20 is formed. In this occasion, a diameter of an interface portion of a grown crystal 10 and a molten liquid 9 is measured by an infrared ray sensor of a diameter monitor unit 11 from an observing window 8 and, by this diameter increasing speed, a picking up speed control apparatus 5 and a crusible heating control apparatus 6 are controlled so as to adjust a diameter of a grown crystal 10 to a constant dimension.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3548379A JPS55130895A (en) | 1979-03-28 | 1979-03-28 | Single crystal preparing method and apparatus therefor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3548379A JPS55130895A (en) | 1979-03-28 | 1979-03-28 | Single crystal preparing method and apparatus therefor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS55130895A true JPS55130895A (en) | 1980-10-11 |
Family
ID=12442993
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3548379A Pending JPS55130895A (en) | 1979-03-28 | 1979-03-28 | Single crystal preparing method and apparatus therefor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55130895A (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6283393A (en) * | 1985-10-08 | 1987-04-16 | Mitsubishi Metal Corp | Single crystal pulling-up device |
JPS62138387A (en) * | 1985-12-10 | 1987-06-22 | Mitsubishi Metal Corp | Device for measuring diameter of pulled crystal |
JPS63242992A (en) * | 1987-03-30 | 1988-10-07 | Kyushu Denshi Kinzoku Kk | Method for controlling single crystal diameter |
JPS63274687A (en) * | 1987-05-06 | 1988-11-11 | Kokusai Electric Co Ltd | Method and device for controlling diameter of single crystal |
WO2000060145A1 (en) * | 1999-04-07 | 2000-10-12 | Memc Electronic Materials, Inc. | Method and system of controlling taper growth in a semiconductor crystal growth process |
WO2004018742A1 (en) * | 2002-07-05 | 2004-03-04 | Sumitomo Mitsubishi Silicon Corporation | Method of producing silicon monocrystal |
-
1979
- 1979-03-28 JP JP3548379A patent/JPS55130895A/en active Pending
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6283393A (en) * | 1985-10-08 | 1987-04-16 | Mitsubishi Metal Corp | Single crystal pulling-up device |
JPH04957B2 (en) * | 1985-10-08 | 1992-01-09 | Mitsubishi Materiaru Kk | |
JPS62138387A (en) * | 1985-12-10 | 1987-06-22 | Mitsubishi Metal Corp | Device for measuring diameter of pulled crystal |
JPH0369877B2 (en) * | 1985-12-10 | 1991-11-05 | Mitsubishi Materiaru Kk | |
JPS63242992A (en) * | 1987-03-30 | 1988-10-07 | Kyushu Denshi Kinzoku Kk | Method for controlling single crystal diameter |
JPS63274687A (en) * | 1987-05-06 | 1988-11-11 | Kokusai Electric Co Ltd | Method and device for controlling diameter of single crystal |
WO2000060145A1 (en) * | 1999-04-07 | 2000-10-12 | Memc Electronic Materials, Inc. | Method and system of controlling taper growth in a semiconductor crystal growth process |
US6241818B1 (en) | 1999-04-07 | 2001-06-05 | Memc Electronic Materials, Inc. | Method and system of controlling taper growth in a semiconductor crystal growth process |
WO2004018742A1 (en) * | 2002-07-05 | 2004-03-04 | Sumitomo Mitsubishi Silicon Corporation | Method of producing silicon monocrystal |
EP1541721A1 (en) * | 2002-07-05 | 2005-06-15 | Sumitomo Mitsubishi Silicon Corporation | Method of producing silicon monocrystal |
EP1541721A4 (en) * | 2002-07-05 | 2009-05-06 | Sumco Corp | Method of producing silicon monocrystal |
EP2287369A1 (en) * | 2002-07-05 | 2011-02-23 | SUMCO Corporation | Method for manufacturing silicon single crystal |
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