JPS55130895A - Single crystal preparing method and apparatus therefor - Google Patents

Single crystal preparing method and apparatus therefor

Info

Publication number
JPS55130895A
JPS55130895A JP3548379A JP3548379A JPS55130895A JP S55130895 A JPS55130895 A JP S55130895A JP 3548379 A JP3548379 A JP 3548379A JP 3548379 A JP3548379 A JP 3548379A JP S55130895 A JPS55130895 A JP S55130895A
Authority
JP
Japan
Prior art keywords
crystal
diameter
picking
grown
molten liquid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3548379A
Other languages
Japanese (ja)
Inventor
Takaaki Aoshima
Yushi Kase
Yoshimitsu Sugita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP3548379A priority Critical patent/JPS55130895A/en
Publication of JPS55130895A publication Critical patent/JPS55130895A/en
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE: To enhance the reproducibility of a crystal shape and obtain a single crystal with stable quality by a mechanism wherein, in case of preparing a single crystal by a Czochralski method, a diameter of an interface of a grown crystal and a molten liquid is monitored to measure the changing ratio of a diameter and a crystal growing condition is controlled.
CONSTITUTION: In case of picking up a single crystal, seed crystal 19 is attached to a chuck portion 18 of a lower end of a picking up shaft 4 and the lower end thereof is immersed within a molten liquid 9 and a crystal is grown on a seed crystal 19 while a picking up shaft 4 is gradually raised. A grown crystal 10 is gradually thicken by changing a picking up speed and a temp. of a molten liquid 9 and a shoulder portion 20 is formed. In this occasion, a diameter of an interface portion of a grown crystal 10 and a molten liquid 9 is measured by an infrared ray sensor of a diameter monitor unit 11 from an observing window 8 and, by this diameter increasing speed, a picking up speed control apparatus 5 and a crusible heating control apparatus 6 are controlled so as to adjust a diameter of a grown crystal 10 to a constant dimension.
COPYRIGHT: (C)1980,JPO&Japio
JP3548379A 1979-03-28 1979-03-28 Single crystal preparing method and apparatus therefor Pending JPS55130895A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3548379A JPS55130895A (en) 1979-03-28 1979-03-28 Single crystal preparing method and apparatus therefor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3548379A JPS55130895A (en) 1979-03-28 1979-03-28 Single crystal preparing method and apparatus therefor

Publications (1)

Publication Number Publication Date
JPS55130895A true JPS55130895A (en) 1980-10-11

Family

ID=12442993

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3548379A Pending JPS55130895A (en) 1979-03-28 1979-03-28 Single crystal preparing method and apparatus therefor

Country Status (1)

Country Link
JP (1) JPS55130895A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6283393A (en) * 1985-10-08 1987-04-16 Mitsubishi Metal Corp Single crystal pulling-up device
JPS62138387A (en) * 1985-12-10 1987-06-22 Mitsubishi Metal Corp Device for measuring diameter of pulled crystal
JPS63242992A (en) * 1987-03-30 1988-10-07 Kyushu Denshi Kinzoku Kk Method for controlling single crystal diameter
JPS63274687A (en) * 1987-05-06 1988-11-11 Kokusai Electric Co Ltd Method and device for controlling diameter of single crystal
WO2000060145A1 (en) * 1999-04-07 2000-10-12 Memc Electronic Materials, Inc. Method and system of controlling taper growth in a semiconductor crystal growth process
WO2004018742A1 (en) * 2002-07-05 2004-03-04 Sumitomo Mitsubishi Silicon Corporation Method of producing silicon monocrystal

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6283393A (en) * 1985-10-08 1987-04-16 Mitsubishi Metal Corp Single crystal pulling-up device
JPH04957B2 (en) * 1985-10-08 1992-01-09 Mitsubishi Materiaru Kk
JPS62138387A (en) * 1985-12-10 1987-06-22 Mitsubishi Metal Corp Device for measuring diameter of pulled crystal
JPH0369877B2 (en) * 1985-12-10 1991-11-05 Mitsubishi Materiaru Kk
JPS63242992A (en) * 1987-03-30 1988-10-07 Kyushu Denshi Kinzoku Kk Method for controlling single crystal diameter
JPS63274687A (en) * 1987-05-06 1988-11-11 Kokusai Electric Co Ltd Method and device for controlling diameter of single crystal
WO2000060145A1 (en) * 1999-04-07 2000-10-12 Memc Electronic Materials, Inc. Method and system of controlling taper growth in a semiconductor crystal growth process
US6241818B1 (en) 1999-04-07 2001-06-05 Memc Electronic Materials, Inc. Method and system of controlling taper growth in a semiconductor crystal growth process
WO2004018742A1 (en) * 2002-07-05 2004-03-04 Sumitomo Mitsubishi Silicon Corporation Method of producing silicon monocrystal
EP1541721A1 (en) * 2002-07-05 2005-06-15 Sumitomo Mitsubishi Silicon Corporation Method of producing silicon monocrystal
EP1541721A4 (en) * 2002-07-05 2009-05-06 Sumco Corp Method of producing silicon monocrystal
EP2287369A1 (en) * 2002-07-05 2011-02-23 SUMCO Corporation Method for manufacturing silicon single crystal

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