JPS55124245A - Method of forming aluminum wiring layer - Google Patents
Method of forming aluminum wiring layerInfo
- Publication number
- JPS55124245A JPS55124245A JP3280579A JP3280579A JPS55124245A JP S55124245 A JPS55124245 A JP S55124245A JP 3280579 A JP3280579 A JP 3280579A JP 3280579 A JP3280579 A JP 3280579A JP S55124245 A JPS55124245 A JP S55124245A
- Authority
- JP
- Japan
- Prior art keywords
- film
- wiring layer
- forming
- coated
- tapered
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To prevent a wire from being stepwisely cut by forming a high purity aluminum layer on an aluminum alloy film, then dry etching a wiring pattern and forming a tapered wiring layer at the side surfaces. CONSTITUTION:A predetermined region is formed, and a silicon dioxide film 2 is coated on the surface of a semiconductor substrate 1. 1mum of aluminum alloy film 3 containing 0.5% of copper is coated on the substrate 1, and 0.2mum of high purity aluminum film 4 is formed on the film 3. Then, a predetermined shape of photoresist film 5 is used as a mask to plasma etch the film 4. Since the film 4 has 1.3 times the etching speed as compared with the film 3, it is side etched and overetched, so that the side surfaces of the film 3 are tapered. Thus, it can form multilayer wires without stepwise breakage.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3280579A JPS55124245A (en) | 1979-03-19 | 1979-03-19 | Method of forming aluminum wiring layer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3280579A JPS55124245A (en) | 1979-03-19 | 1979-03-19 | Method of forming aluminum wiring layer |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS55124245A true JPS55124245A (en) | 1980-09-25 |
Family
ID=12369045
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3280579A Pending JPS55124245A (en) | 1979-03-19 | 1979-03-19 | Method of forming aluminum wiring layer |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55124245A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013153219A (en) * | 2004-09-15 | 2013-08-08 | Semiconductor Energy Lab Co Ltd | Semiconductor device |
-
1979
- 1979-03-19 JP JP3280579A patent/JPS55124245A/en active Pending
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013153219A (en) * | 2004-09-15 | 2013-08-08 | Semiconductor Energy Lab Co Ltd | Semiconductor device |
US8786794B2 (en) | 2004-09-15 | 2014-07-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9252227B2 (en) | 2004-09-15 | 2016-02-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9716180B2 (en) | 2004-09-15 | 2017-07-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US10109744B2 (en) | 2004-09-15 | 2018-10-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US10573757B2 (en) | 2004-09-15 | 2020-02-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US10903367B2 (en) | 2004-09-15 | 2021-01-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US11482624B2 (en) | 2004-09-15 | 2022-10-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
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