JPS55124245A - Method of forming aluminum wiring layer - Google Patents

Method of forming aluminum wiring layer

Info

Publication number
JPS55124245A
JPS55124245A JP3280579A JP3280579A JPS55124245A JP S55124245 A JPS55124245 A JP S55124245A JP 3280579 A JP3280579 A JP 3280579A JP 3280579 A JP3280579 A JP 3280579A JP S55124245 A JPS55124245 A JP S55124245A
Authority
JP
Japan
Prior art keywords
film
wiring layer
forming
coated
tapered
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3280579A
Other languages
Japanese (ja)
Inventor
Morio Inoue
Kenji Mitsui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP3280579A priority Critical patent/JPS55124245A/en
Publication of JPS55124245A publication Critical patent/JPS55124245A/en
Pending legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To prevent a wire from being stepwisely cut by forming a high purity aluminum layer on an aluminum alloy film, then dry etching a wiring pattern and forming a tapered wiring layer at the side surfaces. CONSTITUTION:A predetermined region is formed, and a silicon dioxide film 2 is coated on the surface of a semiconductor substrate 1. 1mum of aluminum alloy film 3 containing 0.5% of copper is coated on the substrate 1, and 0.2mum of high purity aluminum film 4 is formed on the film 3. Then, a predetermined shape of photoresist film 5 is used as a mask to plasma etch the film 4. Since the film 4 has 1.3 times the etching speed as compared with the film 3, it is side etched and overetched, so that the side surfaces of the film 3 are tapered. Thus, it can form multilayer wires without stepwise breakage.
JP3280579A 1979-03-19 1979-03-19 Method of forming aluminum wiring layer Pending JPS55124245A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3280579A JPS55124245A (en) 1979-03-19 1979-03-19 Method of forming aluminum wiring layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3280579A JPS55124245A (en) 1979-03-19 1979-03-19 Method of forming aluminum wiring layer

Publications (1)

Publication Number Publication Date
JPS55124245A true JPS55124245A (en) 1980-09-25

Family

ID=12369045

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3280579A Pending JPS55124245A (en) 1979-03-19 1979-03-19 Method of forming aluminum wiring layer

Country Status (1)

Country Link
JP (1) JPS55124245A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013153219A (en) * 2004-09-15 2013-08-08 Semiconductor Energy Lab Co Ltd Semiconductor device

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013153219A (en) * 2004-09-15 2013-08-08 Semiconductor Energy Lab Co Ltd Semiconductor device
US8786794B2 (en) 2004-09-15 2014-07-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9252227B2 (en) 2004-09-15 2016-02-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9716180B2 (en) 2004-09-15 2017-07-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US10109744B2 (en) 2004-09-15 2018-10-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US10573757B2 (en) 2004-09-15 2020-02-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US10903367B2 (en) 2004-09-15 2021-01-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US11482624B2 (en) 2004-09-15 2022-10-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device

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