JPS55120181A - Fabricating method of photovoltaic device - Google Patents
Fabricating method of photovoltaic deviceInfo
- Publication number
- JPS55120181A JPS55120181A JP2780279A JP2780279A JPS55120181A JP S55120181 A JPS55120181 A JP S55120181A JP 2780279 A JP2780279 A JP 2780279A JP 2780279 A JP2780279 A JP 2780279A JP S55120181 A JPS55120181 A JP S55120181A
- Authority
- JP
- Japan
- Prior art keywords
- electrodes
- generating sections
- layer
- coated
- amorphous silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract 2
- 229910003437 indium oxide Inorganic materials 0.000 abstract 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 abstract 2
- 239000011521 glass Substances 0.000 abstract 1
- 230000000717 retained effect Effects 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 abstract 1
- 229910001887 tin oxide Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
PURPOSE:To exactly eliminate leakage current in a photovoltaic device and be adapted for a mass production of the device by continuously forming a plurality of generating sections using amorphous silicon layers and removing the boundaries with plasma when separating into the continuous generating sections. CONSTITUTION:A plurality of the first electrodes 12 made of tin oxide, indium oxide, indium oxide.tin or the like are coated in space on a flat insulating substrate 7 such as glass transmitting visible light rays. Then, an amorphous silicon layer 11 consisting of a p-type layer 3, a non-doped layer 4 and an n-type layer 5 is coated on the entire surface including the electrodes 12 to form continuous generating sections first. Then, the second electrodes 13 made of Al, Cr or the like are formed on the electrodes 12, the exposed layer 11 not provided with the electrodes 13 is etched and removed to the bottom of the layer 4 with plasma atmosphere, and the continuous generating sections are retained only between the electrodes 12 and 13. When the independent generating sections are then connected in series, no undesired leakage current is produced therebetween.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2780279A JPS55120181A (en) | 1979-03-09 | 1979-03-09 | Fabricating method of photovoltaic device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2780279A JPS55120181A (en) | 1979-03-09 | 1979-03-09 | Fabricating method of photovoltaic device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS55120181A true JPS55120181A (en) | 1980-09-16 |
| JPH0228906B2 JPH0228906B2 (en) | 1990-06-27 |
Family
ID=12231099
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2780279A Granted JPS55120181A (en) | 1979-03-09 | 1979-03-09 | Fabricating method of photovoltaic device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55120181A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58155770A (en) * | 1982-03-10 | 1983-09-16 | Matsushita Electric Ind Co Ltd | Substrate for amorphous silicon solar cell |
| WO2011001842A1 (en) * | 2009-07-03 | 2011-01-06 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and manufacturing method thereof |
| US9437758B2 (en) | 2011-02-21 | 2016-09-06 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4042418A (en) * | 1976-08-02 | 1977-08-16 | Westinghouse Electric Corporation | Photovoltaic device and method of making same |
-
1979
- 1979-03-09 JP JP2780279A patent/JPS55120181A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4042418A (en) * | 1976-08-02 | 1977-08-16 | Westinghouse Electric Corporation | Photovoltaic device and method of making same |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58155770A (en) * | 1982-03-10 | 1983-09-16 | Matsushita Electric Ind Co Ltd | Substrate for amorphous silicon solar cell |
| JPH0125234B2 (en) * | 1982-03-10 | 1989-05-16 | Matsushita Electric Ind Co Ltd | |
| WO2011001842A1 (en) * | 2009-07-03 | 2011-01-06 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and manufacturing method thereof |
| US9496428B2 (en) | 2009-07-03 | 2016-11-15 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and manufacturing method thereof |
| US9437758B2 (en) | 2011-02-21 | 2016-09-06 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0228906B2 (en) | 1990-06-27 |
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