JPS55115383A - Bias circuit for laser diode - Google Patents

Bias circuit for laser diode

Info

Publication number
JPS55115383A
JPS55115383A JP2275479A JP2275479A JPS55115383A JP S55115383 A JPS55115383 A JP S55115383A JP 2275479 A JP2275479 A JP 2275479A JP 2275479 A JP2275479 A JP 2275479A JP S55115383 A JPS55115383 A JP S55115383A
Authority
JP
Japan
Prior art keywords
transistor
diode
laser diode
temperature
coupled
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2275479A
Other languages
Japanese (ja)
Inventor
Tadayoshi Kitayama
Munehiko Nagano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2275479A priority Critical patent/JPS55115383A/en
Publication of JPS55115383A publication Critical patent/JPS55115383A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/06804—Stabilisation of laser output parameters by monitoring an external parameter, e.g. temperature

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To stabilize a light output despite the change in the threshold current of a laser diode due to temperature change, by utilizing the voltage across the base and emitter of a transistor or the temperature characteristics of said voltage and the terminal voltage of the diode. CONSTITUTION:A laser diode 1 is connected to the collector of a transistor 5 through a modulation signal input terminal 8. A resistor 9 whose resistance is set for temperature compensation is coupled to the emitter of the transistor. Bias resistors 10, 11 for the transistor 5 are coupled in parallel with the connected circuit including the transistor and the diode 1. The connection node of the resistors 10, 11 is connected to the base of the transistor 5. A DC power source 7 is coupled in parallel with the circuit including the transistor 5. Since the light output of the diode is stabilized by the temperature characteristic of the transistor circuit against the ambient temperature, the bias circuit is rendered simple and cheap.
JP2275479A 1979-02-27 1979-02-27 Bias circuit for laser diode Pending JPS55115383A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2275479A JPS55115383A (en) 1979-02-27 1979-02-27 Bias circuit for laser diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2275479A JPS55115383A (en) 1979-02-27 1979-02-27 Bias circuit for laser diode

Publications (1)

Publication Number Publication Date
JPS55115383A true JPS55115383A (en) 1980-09-05

Family

ID=12091465

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2275479A Pending JPS55115383A (en) 1979-02-27 1979-02-27 Bias circuit for laser diode

Country Status (1)

Country Link
JP (1) JPS55115383A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02151089A (en) * 1988-12-01 1990-06-11 Matsushita Electric Ind Co Ltd Apc circuit and integrated circuit with built-in apc circuit
US6724205B1 (en) 2002-11-13 2004-04-20 Cascade Microtech, Inc. Probe for combined signals
US7355420B2 (en) 2001-08-21 2008-04-08 Cascade Microtech, Inc. Membrane probing system
US7420381B2 (en) 2004-09-13 2008-09-02 Cascade Microtech, Inc. Double sided probing structures
US7492172B2 (en) 2003-05-23 2009-02-17 Cascade Microtech, Inc. Chuck for holding a device under test

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02151089A (en) * 1988-12-01 1990-06-11 Matsushita Electric Ind Co Ltd Apc circuit and integrated circuit with built-in apc circuit
US7355420B2 (en) 2001-08-21 2008-04-08 Cascade Microtech, Inc. Membrane probing system
US7492175B2 (en) 2001-08-21 2009-02-17 Cascade Microtech, Inc. Membrane probing system
US6724205B1 (en) 2002-11-13 2004-04-20 Cascade Microtech, Inc. Probe for combined signals
US7046023B2 (en) 2002-11-13 2006-05-16 Cascade Microtech, Inc. Probe for combined signals
US7492172B2 (en) 2003-05-23 2009-02-17 Cascade Microtech, Inc. Chuck for holding a device under test
US7876115B2 (en) 2003-05-23 2011-01-25 Cascade Microtech, Inc. Chuck for holding a device under test
US7420381B2 (en) 2004-09-13 2008-09-02 Cascade Microtech, Inc. Double sided probing structures
US8013623B2 (en) 2004-09-13 2011-09-06 Cascade Microtech, Inc. Double sided probing structures

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