JPS55113191A - Memory unit - Google Patents

Memory unit

Info

Publication number
JPS55113191A
JPS55113191A JP1935879A JP1935879A JPS55113191A JP S55113191 A JPS55113191 A JP S55113191A JP 1935879 A JP1935879 A JP 1935879A JP 1935879 A JP1935879 A JP 1935879A JP S55113191 A JPS55113191 A JP S55113191A
Authority
JP
Japan
Prior art keywords
write
word line
signal
digit line
point
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1935879A
Other languages
Japanese (ja)
Inventor
Osamu Kudo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP1935879A priority Critical patent/JPS55113191A/en
Publication of JPS55113191A publication Critical patent/JPS55113191A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Dram (AREA)

Abstract

PURPOSE:To generate a large read signal by a small cell by constituting the dynamic memory of a semiconductor integrated circuit in a specific shape. CONSTITUTION:The gate of write MOSFETQW is connected to write word line WW, and the source and drain of FETQW are to write digit line DW and signal holding point A. The gate of read-only J-FETQR is connected to holding point A; and either of its source and drain is connected to substrate SUB, and the other to digit line DR. On the other hand, holding capacitor CJ is connected between holding point A and substrate SUB, and coupling capacitor CR between point A and word line WR. Thus, digit line DR is held at the potential of the substrate by the potential variation of capacity-coupling word line WR only in ''0''-read operation, so that a large signal can be generated by a small cell.
JP1935879A 1979-02-21 1979-02-21 Memory unit Pending JPS55113191A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1935879A JPS55113191A (en) 1979-02-21 1979-02-21 Memory unit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1935879A JPS55113191A (en) 1979-02-21 1979-02-21 Memory unit

Publications (1)

Publication Number Publication Date
JPS55113191A true JPS55113191A (en) 1980-09-01

Family

ID=11997141

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1935879A Pending JPS55113191A (en) 1979-02-21 1979-02-21 Memory unit

Country Status (1)

Country Link
JP (1) JPS55113191A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6278799A (en) * 1985-07-19 1987-04-11 テキサス　インスツルメンツ　インコ−ポレイテツド Dynamic random access memory cell
JP2011036316A (en) * 2009-08-07 2011-02-24 Keisuke Kinoshita Laundry drying/pulling tool

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6278799A (en) * 1985-07-19 1987-04-11 テキサス　インスツルメンツ　インコ−ポレイテツド Dynamic random access memory cell
JP2011036316A (en) * 2009-08-07 2011-02-24 Keisuke Kinoshita Laundry drying/pulling tool

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