JPS55111158A - Semiconductor circuit - Google Patents

Semiconductor circuit

Info

Publication number
JPS55111158A
JPS55111158A JP1886079A JP1886079A JPS55111158A JP S55111158 A JPS55111158 A JP S55111158A JP 1886079 A JP1886079 A JP 1886079A JP 1886079 A JP1886079 A JP 1886079A JP S55111158 A JPS55111158 A JP S55111158A
Authority
JP
Japan
Prior art keywords
type
channel
power source
enhancement
current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1886079A
Other languages
Japanese (ja)
Inventor
Masaharu Ozaki
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NIPPON PRECISION SAAKITSUTSU KK
Nippon Precision Circuits Inc
Original Assignee
NIPPON PRECISION SAAKITSUTSU KK
Nippon Precision Circuits Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NIPPON PRECISION SAAKITSUTSU KK, Nippon Precision Circuits Inc filed Critical NIPPON PRECISION SAAKITSUTSU KK
Priority to JP1886079A priority Critical patent/JPS55111158A/en
Publication of JPS55111158A publication Critical patent/JPS55111158A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0008—Arrangements for reducing power consumption
    • H03K19/0013—Arrangements for reducing power consumption in field effect transistor circuits

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To reduce the consumed power of a C-MOS inverter or the like, by providing a current limiter of constant current characteristic between a switching element and a power source so that the charging and discharging currents of a capacitive load are almost equalized to each other. CONSTITUTION:An enhancement-type p-channel MOSFET18 is connected between a power source anode VDD and another enhancement-type p-channel MOSFET12a which constitutes a C-MOS inverter 12. An enhancement-type n-channel MOSFET 19 is connected between another enhancement-type n-channel MOSFET12b and a power source cathode (the ground). A constant voltage VGS1 is applied across the gate and source of the FET18. Another constant voltage VGS2 is applied across the gate and source of FET19. These voltages are set equal to each other so that the FET's 18, 19 are operated as constant current sources of almost equal characteristic. A crystal oscillator circuit 11 or the like is thus constituted. As a result, a charging current flowing from the power source anode VDD into a floating capacitance 25 and a discharge current flowing out to the ground are equalized to each other and a transient penetrating current at the inverting action of the inverter 12 is limited below a prescribed level to reduce consumed power.
JP1886079A 1979-02-20 1979-02-20 Semiconductor circuit Pending JPS55111158A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1886079A JPS55111158A (en) 1979-02-20 1979-02-20 Semiconductor circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1886079A JPS55111158A (en) 1979-02-20 1979-02-20 Semiconductor circuit

Publications (1)

Publication Number Publication Date
JPS55111158A true JPS55111158A (en) 1980-08-27

Family

ID=11983287

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1886079A Pending JPS55111158A (en) 1979-02-20 1979-02-20 Semiconductor circuit

Country Status (1)

Country Link
JP (1) JPS55111158A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7023129B1 (en) 1999-10-22 2006-04-04 Matsushita Electric Industrial Co., Ltd. Cathode-ray tube and image display comprising the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7023129B1 (en) 1999-10-22 2006-04-04 Matsushita Electric Industrial Co., Ltd. Cathode-ray tube and image display comprising the same

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