JPS55104059A - Electric field radiation type electron microscope - Google Patents
Electric field radiation type electron microscopeInfo
- Publication number
- JPS55104059A JPS55104059A JP1143579A JP1143579A JPS55104059A JP S55104059 A JPS55104059 A JP S55104059A JP 1143579 A JP1143579 A JP 1143579A JP 1143579 A JP1143579 A JP 1143579A JP S55104059 A JPS55104059 A JP S55104059A
- Authority
- JP
- Japan
- Prior art keywords
- power source
- sample
- filament
- tip
- time
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electron Sources, Ion Sources (AREA)
Abstract
PURPOSE: To permit the highly accurate observation of sample image by the procedure in which an electric signal is generated at a time when the exchange of sample is finished and then a current from flashing power source is flowed automatically to filament by the signal generated and tip is cleaned.
CONSTITUTION: The filament 22 to which the needle-like tip 1 of tungsten single crystal is attached is connected to the high-tension power source 2 and also to the flashing power source 3. Also, the switch 31 is provided between the flashing power source 3 and the filament 22 and closed for a short time by the signal generator 32 operating at a time when the exchange of sample is finished. Thus, current from the flashing power source 3 flows in the filament 22 automatically at the time of example exchange, the tip 1 is cleaned, and then voltage from the high-tension power source 2 is applied to the tip 1, so that highly accurate observation can be assured without influence of gas generated from sample or sample chamber.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1143579A JPS55104059A (en) | 1979-02-05 | 1979-02-05 | Electric field radiation type electron microscope |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1143579A JPS55104059A (en) | 1979-02-05 | 1979-02-05 | Electric field radiation type electron microscope |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS55104059A true JPS55104059A (en) | 1980-08-09 |
Family
ID=11777997
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1143579A Pending JPS55104059A (en) | 1979-02-05 | 1979-02-05 | Electric field radiation type electron microscope |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55104059A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0594084B1 (en) * | 1992-10-20 | 2003-05-21 | Hitachi, Ltd. | Scanning electron microscope |
| JP2007073521A (en) * | 2005-09-05 | 2007-03-22 | Ict Integrated Circuit Testing Ges Fuer Halbleiterprueftechnik Mbh | Electrically-charged particle beam irradiation device and method for operating it |
-
1979
- 1979-02-05 JP JP1143579A patent/JPS55104059A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0594084B1 (en) * | 1992-10-20 | 2003-05-21 | Hitachi, Ltd. | Scanning electron microscope |
| JP2007073521A (en) * | 2005-09-05 | 2007-03-22 | Ict Integrated Circuit Testing Ges Fuer Halbleiterprueftechnik Mbh | Electrically-charged particle beam irradiation device and method for operating it |
| JP2009117394A (en) * | 2005-09-05 | 2009-05-28 | Ict Integrated Circuit Testing Ges Fuer Halbleiterprueftechnik Mbh | Charged particle beam irradiating device, and method for operating charged particle beam irradiating device |
| US7595490B2 (en) | 2005-09-05 | 2009-09-29 | Ict, Integrated Circuit Testing Gesellschaft Fur Halbleiterpruftechnik Mbh | Charged particle beam emitting device and method for operating a charged particle beam emitting device |
| EP1993119B1 (en) * | 2005-09-05 | 2017-11-08 | ICT, Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH | Charged particle beam emitting device and method for operating a charged particle beam emitting device |
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