JPS55103718A - Forming method of single crystal thin film onto base plate and its equipment - Google Patents
Forming method of single crystal thin film onto base plate and its equipmentInfo
- Publication number
- JPS55103718A JPS55103718A JP1206979A JP1206979A JPS55103718A JP S55103718 A JPS55103718 A JP S55103718A JP 1206979 A JP1206979 A JP 1206979A JP 1206979 A JP1206979 A JP 1206979A JP S55103718 A JPS55103718 A JP S55103718A
- Authority
- JP
- Japan
- Prior art keywords
- base plate
- thin film
- single crystal
- crystal thin
- pitch
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Led Devices (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Light Receiving Elements (AREA)
Abstract
PURPOSE:To make possible to obtain desired single cryustal thin film on base plate, even though not on single crystal base plate, by supplying material vapor or gas of desired single crystal thin film onto base plate, under a condition of processing on base plate grating in the same pitch or its integral multiple of pitch with grating constant of desired single crystal thin film. CONSTITUTION:The equipment is consisted of electron beam interference generating device 1, single crystal thin film material vapor generating source 2 and vacuum container 3 in which above two are contained. Inside of vacuum container 3, there are arranged non-crystal base plate 40 made out from silica glass and which receives irradiation of electro beam B2, having interference fringe of pitch gamma, from device 1, and put material, composed of Ge, into single crystal thin film material vapor generator 2 and extract air from vacuum container 3. Then electro beam B2 is irradiated onto base plate 40 and thus is obtained the condition wherein grating whose pitch is approx, 2 times of the grating constant of the single crystal thin film of the desired Ge is constituted on the base plate 40. Under this condition, Ge vapor is generated from device 2, suppling Ge vapor to the base plate 40 and thin film is formed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1206979A JPS55103718A (en) | 1979-02-05 | 1979-02-05 | Forming method of single crystal thin film onto base plate and its equipment |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1206979A JPS55103718A (en) | 1979-02-05 | 1979-02-05 | Forming method of single crystal thin film onto base plate and its equipment |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS55103718A true JPS55103718A (en) | 1980-08-08 |
JPS571887B2 JPS571887B2 (en) | 1982-01-13 |
Family
ID=11795307
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1206979A Granted JPS55103718A (en) | 1979-02-05 | 1979-02-05 | Forming method of single crystal thin film onto base plate and its equipment |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55103718A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0227373A2 (en) * | 1985-12-16 | 1987-07-01 | Hitachi, Ltd. | Process for fabricating a semiconductor structure |
-
1979
- 1979-02-05 JP JP1206979A patent/JPS55103718A/en active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0227373A2 (en) * | 1985-12-16 | 1987-07-01 | Hitachi, Ltd. | Process for fabricating a semiconductor structure |
Also Published As
Publication number | Publication date |
---|---|
JPS571887B2 (en) | 1982-01-13 |
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