JPS55103718A - Forming method of single crystal thin film onto base plate and its equipment - Google Patents

Forming method of single crystal thin film onto base plate and its equipment

Info

Publication number
JPS55103718A
JPS55103718A JP1206979A JP1206979A JPS55103718A JP S55103718 A JPS55103718 A JP S55103718A JP 1206979 A JP1206979 A JP 1206979A JP 1206979 A JP1206979 A JP 1206979A JP S55103718 A JPS55103718 A JP S55103718A
Authority
JP
Japan
Prior art keywords
base plate
thin film
single crystal
crystal thin
pitch
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1206979A
Other languages
Japanese (ja)
Other versions
JPS571887B2 (en
Inventor
Hidefumi Mori
Tatsuo Izawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP1206979A priority Critical patent/JPS55103718A/en
Publication of JPS55103718A publication Critical patent/JPS55103718A/en
Publication of JPS571887B2 publication Critical patent/JPS571887B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Led Devices (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To make possible to obtain desired single cryustal thin film on base plate, even though not on single crystal base plate, by supplying material vapor or gas of desired single crystal thin film onto base plate, under a condition of processing on base plate grating in the same pitch or its integral multiple of pitch with grating constant of desired single crystal thin film. CONSTITUTION:The equipment is consisted of electron beam interference generating device 1, single crystal thin film material vapor generating source 2 and vacuum container 3 in which above two are contained. Inside of vacuum container 3, there are arranged non-crystal base plate 40 made out from silica glass and which receives irradiation of electro beam B2, having interference fringe of pitch gamma, from device 1, and put material, composed of Ge, into single crystal thin film material vapor generator 2 and extract air from vacuum container 3. Then electro beam B2 is irradiated onto base plate 40 and thus is obtained the condition wherein grating whose pitch is approx, 2 times of the grating constant of the single crystal thin film of the desired Ge is constituted on the base plate 40. Under this condition, Ge vapor is generated from device 2, suppling Ge vapor to the base plate 40 and thin film is formed.
JP1206979A 1979-02-05 1979-02-05 Forming method of single crystal thin film onto base plate and its equipment Granted JPS55103718A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1206979A JPS55103718A (en) 1979-02-05 1979-02-05 Forming method of single crystal thin film onto base plate and its equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1206979A JPS55103718A (en) 1979-02-05 1979-02-05 Forming method of single crystal thin film onto base plate and its equipment

Publications (2)

Publication Number Publication Date
JPS55103718A true JPS55103718A (en) 1980-08-08
JPS571887B2 JPS571887B2 (en) 1982-01-13

Family

ID=11795307

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1206979A Granted JPS55103718A (en) 1979-02-05 1979-02-05 Forming method of single crystal thin film onto base plate and its equipment

Country Status (1)

Country Link
JP (1) JPS55103718A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0227373A2 (en) * 1985-12-16 1987-07-01 Hitachi, Ltd. Process for fabricating a semiconductor structure

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0227373A2 (en) * 1985-12-16 1987-07-01 Hitachi, Ltd. Process for fabricating a semiconductor structure

Also Published As

Publication number Publication date
JPS571887B2 (en) 1982-01-13

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