JPS5510239A - Bilateral semiconductor switch - Google Patents

Bilateral semiconductor switch

Info

Publication number
JPS5510239A
JPS5510239A JP8278278A JP8278278A JPS5510239A JP S5510239 A JPS5510239 A JP S5510239A JP 8278278 A JP8278278 A JP 8278278A JP 8278278 A JP8278278 A JP 8278278A JP S5510239 A JPS5510239 A JP S5510239A
Authority
JP
Japan
Prior art keywords
diodes
gates
increasing
common
conduction type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8278278A
Other languages
Japanese (ja)
Other versions
JPS6119143B2 (en
Inventor
Tetsuo Yoshino
Takatake Sawano
Tokuo Takeuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP8278278A priority Critical patent/JPS5510239A/en
Priority to US06/031,131 priority patent/US4302687A/en
Publication of JPS5510239A publication Critical patent/JPS5510239A/en
Publication of JPS6119143B2 publication Critical patent/JPS6119143B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
    • H03K17/725—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region for ac voltages or currents

Landscapes

  • Thyristor Switches And Gates (AREA)
  • Use Of Switch Circuits For Exchanges And Methods Of Control Of Multiplex Exchanges (AREA)

Abstract

PURPOSE:To make it possible to allow an alternating current signal to pass through with no momentary break, by obtaining desired low-loss characteristics by increasing dv/dt dielectric strength without increasing the inflow of a gate current into a signal line. CONSTITUTION:Base terminals (anode gate) of equivalent transistors of the 1st conduction type of four-terminal thyristors 41 and 43 connected in reverse parallel are connected in common, and To base-emitter junctions of equivalent transistors of the 2nd conduction type, resistances 42 and 44 are connected in parallel which have resistance values meeting the requirement of desired dv/dt dielectric strength. In addition, diodes 45 and 46 for the prevention of a reverse current to the driving method are connected between cathodes and gates of thyristors 41 and 43. Between the common-connected anode gates and the connection point of diodes 45 and 46, a couple of amplifying methodes 47 and 48 are connected which amplify currents from driver circuits 49 and 50, have complementary input characteristics and are tolerant of an applied transient voltage.
JP8278278A 1978-04-20 1978-07-06 Bilateral semiconductor switch Granted JPS5510239A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP8278278A JPS5510239A (en) 1978-07-06 1978-07-06 Bilateral semiconductor switch
US06/031,131 US4302687A (en) 1978-04-20 1979-04-18 Semiconductor switch

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8278278A JPS5510239A (en) 1978-07-06 1978-07-06 Bilateral semiconductor switch

Publications (2)

Publication Number Publication Date
JPS5510239A true JPS5510239A (en) 1980-01-24
JPS6119143B2 JPS6119143B2 (en) 1986-05-15

Family

ID=13783978

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8278278A Granted JPS5510239A (en) 1978-04-20 1978-07-06 Bilateral semiconductor switch

Country Status (1)

Country Link
JP (1) JPS5510239A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6060821A (en) * 1993-06-16 2000-05-09 Ngk Spark Plug Co., Ltd. Heater equipped spark plug

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01166133U (en) * 1988-04-27 1989-11-21

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6060821A (en) * 1993-06-16 2000-05-09 Ngk Spark Plug Co., Ltd. Heater equipped spark plug

Also Published As

Publication number Publication date
JPS6119143B2 (en) 1986-05-15

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