JPS5489595A - Manufacture for semiconductor device - Google Patents
Manufacture for semiconductor deviceInfo
- Publication number
- JPS5489595A JPS5489595A JP15966977A JP15966977A JPS5489595A JP S5489595 A JPS5489595 A JP S5489595A JP 15966977 A JP15966977 A JP 15966977A JP 15966977 A JP15966977 A JP 15966977A JP S5489595 A JPS5489595 A JP S5489595A
- Authority
- JP
- Japan
- Prior art keywords
- pad
- deficient
- electrode
- modules
- pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 230000002950 deficient Effects 0.000 abstract 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 230000007812 deficiency Effects 0.000 abstract 1
- 239000000523 sample Substances 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/118—Masterslice integrated circuits
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Abstract
PURPOSE:To make LSI into high density, by providing the measuring pad to the functional module electrodes for the entire circuit, removing the pad after discriminating and picking up only non-deficient modules via the pad, and performing mutual connection through the use of the remaining electrodes for the non-deficient modules. CONSTITUTION:The circuit functional modules 22 are formed on the Si substrate 21, they are covered with the SiO2 film 24, and the conduction pattern 23 connected to the modules 22 is fitted with opening. Next, PSG film 25 is coated on the entire surface, opening is made, and the conduction pattern 27 connected to the pattern 23 is formed, and the pad 26 to measure larger area linked with the module electrode 28 in contact with the pattern 27 is provided. The module is constituted as mentioned above, and the deficiency is discriminated by pushing on the test probe 31 on the pad 26, and the pad 26 is removed while tapering the side surface of the electrode 28, if it is not deficient. Further, if deficient, the pad 26 as well as the electrode 28 are removed and the selective electrode 51 is attached to the electrode 28 only for the non-deficient modules and mutual wiring is made.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15966977A JPS5489595A (en) | 1977-12-27 | 1977-12-27 | Manufacture for semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15966977A JPS5489595A (en) | 1977-12-27 | 1977-12-27 | Manufacture for semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5489595A true JPS5489595A (en) | 1979-07-16 |
Family
ID=15698741
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15966977A Pending JPS5489595A (en) | 1977-12-27 | 1977-12-27 | Manufacture for semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5489595A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS621247A (en) * | 1985-02-14 | 1987-01-07 | Nec Corp | Manufacture of semiconductor device |
-
1977
- 1977-12-27 JP JP15966977A patent/JPS5489595A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS621247A (en) * | 1985-02-14 | 1987-01-07 | Nec Corp | Manufacture of semiconductor device |
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