JPS5489477A - Production of semiconductor device - Google Patents
Production of semiconductor deviceInfo
- Publication number
- JPS5489477A JPS5489477A JP15648577A JP15648577A JPS5489477A JP S5489477 A JPS5489477 A JP S5489477A JP 15648577 A JP15648577 A JP 15648577A JP 15648577 A JP15648577 A JP 15648577A JP S5489477 A JPS5489477 A JP S5489477A
- Authority
- JP
- Japan
- Prior art keywords
- region
- substrate
- layer
- furnace wall
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
Abstract
PURPOSE: To obtain good non-rectifying contact by depositing an impurity metal of the same conductivity as that of electrode metal on the electrode forming regions of a semiconductor substrate, applying specified heat treatment then forming electrodes there.
CONSTITUTION: A P-type base region 3 is provided on one surface of an N- type Si substrate 1 and an N+ type collector connection region 2 on the other surface and an N+ type emitter region 4 is provided within the region 3 to provide an N+PN-N+ transistor. Next, a part of the region 4 and region 3 is exposed and other regions are covered with a SiO2 film 6, after which an Al layer 7 is evaporated over the entire surface. Next, the substrate 0 of this structure is put in a furnace 8 and vacuum of 10-4 to 10-6 Torr is formed therein, thence the substrate is heated for about 10 minutes with the furnace wall surface 81 to which the region 2 opposes being kept at 800°C and the furnace wall surface 82 to which the Al layer 7 opposes being kept at 750°C. Thereafter, the substrate 10 is turned over to interchange the faces to be opposed to the furnace wall and is heated in a similar manner. By this manner, a good non-rectifying contact layer 10 is producted on the surface layer part of the region 3 under the Al layer 7 and an Al electrode 9 is formed in the region 4.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15648577A JPS5489477A (en) | 1977-12-27 | 1977-12-27 | Production of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15648577A JPS5489477A (en) | 1977-12-27 | 1977-12-27 | Production of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5489477A true JPS5489477A (en) | 1979-07-16 |
JPS6133262B2 JPS6133262B2 (en) | 1986-08-01 |
Family
ID=15628781
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15648577A Granted JPS5489477A (en) | 1977-12-27 | 1977-12-27 | Production of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5489477A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5753933A (en) * | 1980-09-18 | 1982-03-31 | Toshiba Corp | Manufacture of semiconductor element |
-
1977
- 1977-12-27 JP JP15648577A patent/JPS5489477A/en active Granted
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5753933A (en) * | 1980-09-18 | 1982-03-31 | Toshiba Corp | Manufacture of semiconductor element |
JPH0214772B2 (en) * | 1980-09-18 | 1990-04-10 | Tokyo Shibaura Electric Co |
Also Published As
Publication number | Publication date |
---|---|
JPS6133262B2 (en) | 1986-08-01 |
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