JPS548129A - Method of making metallic layer - Google Patents

Method of making metallic layer

Info

Publication number
JPS548129A
JPS548129A JP7480378A JP7480378A JPS548129A JP S548129 A JPS548129 A JP S548129A JP 7480378 A JP7480378 A JP 7480378A JP 7480378 A JP7480378 A JP 7480378A JP S548129 A JPS548129 A JP S548129A
Authority
JP
Japan
Prior art keywords
metallic layer
making metallic
making
layer
metallic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7480378A
Other languages
Japanese (ja)
Inventor
Mentsueru Giyuntaa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of JPS548129A publication Critical patent/JPS548129A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
    • C30B23/063—Heating of the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/541—Heating or cooling of the substrates
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/52—Alloys
JP7480378A 1977-06-20 1978-06-20 Method of making metallic layer Pending JPS548129A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2727659A DE2727659B2 (en) 1977-06-20 1977-06-20 Process for the production of coarsely crystalline or monocrystalline metal layers

Publications (1)

Publication Number Publication Date
JPS548129A true JPS548129A (en) 1979-01-22

Family

ID=6011893

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7480378A Pending JPS548129A (en) 1977-06-20 1978-06-20 Method of making metallic layer

Country Status (5)

Country Link
JP (1) JPS548129A (en)
CH (1) CH634605A5 (en)
DE (1) DE2727659B2 (en)
FR (1) FR2395326A1 (en)
GB (1) GB1576707A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56125298A (en) * 1980-01-30 1981-10-01 Siemens Ag Growth of metal layer or alloy layer on substrate
JPS63166966A (en) * 1986-12-27 1988-07-11 Tokuda Seisakusho Ltd Sputtering device
US6333259B1 (en) 1998-08-25 2001-12-25 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and apparatus and method for manufacturing the same

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2924920A1 (en) * 1979-06-20 1981-01-22 Siemens Ag METHOD FOR PRODUCING COARSE CRYSTAL OR SINGLE CRYSTAL METAL OR ALLOY LAYERS
DE3003136A1 (en) * 1980-01-29 1981-07-30 Siemens AG, 1000 Berlin und 8000 München METHOD FOR PRODUCING THERMALLY STABLE, METAL LAYERS
DE3390522C2 (en) * 1983-08-25 1987-10-15 Vni Skij Instr Nyj I Cutting tool and process for its production
DE3762052D1 (en) * 1986-03-31 1990-05-03 Unisys Corp DEPOSITION OF A VANADIN MAT FOR MAGNETIC FILMS.
DE19851167B4 (en) * 1998-11-06 2005-10-20 Herbert Kliem Electric capacitor

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1285827B (en) * 1963-03-26 1968-12-19 Ibm Process for the production of thin layers with high purity and uniformity, by vacuum vapor deposition
FR1459038A (en) * 1964-09-11 1966-04-29 Ibm Amorphous alloys

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56125298A (en) * 1980-01-30 1981-10-01 Siemens Ag Growth of metal layer or alloy layer on substrate
JPS63166966A (en) * 1986-12-27 1988-07-11 Tokuda Seisakusho Ltd Sputtering device
US6333259B1 (en) 1998-08-25 2001-12-25 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and apparatus and method for manufacturing the same

Also Published As

Publication number Publication date
DE2727659A1 (en) 1979-01-04
DE2727659B2 (en) 1980-01-10
CH634605A5 (en) 1983-02-15
FR2395326B1 (en) 1984-05-25
FR2395326A1 (en) 1979-01-19
GB1576707A (en) 1980-10-15

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