JPS5481179A - Heat treatment of single crystal - Google Patents
Heat treatment of single crystalInfo
- Publication number
- JPS5481179A JPS5481179A JP15022177A JP15022177A JPS5481179A JP S5481179 A JPS5481179 A JP S5481179A JP 15022177 A JP15022177 A JP 15022177A JP 15022177 A JP15022177 A JP 15022177A JP S5481179 A JPS5481179 A JP S5481179A
- Authority
- JP
- Japan
- Prior art keywords
- crystal
- temperature
- heat treatment
- heat
- single crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE:To obtain high quality single crystal by eliminating the concentration of heat stress on crystal habit line and preventing the occurrence of slide transfer by the procedure in which heat treatment is conducted under the condition in which the temperature inside furnace is made to have an anisotropy and the inflow and outflow of heat from crystal surface is made uniformly. CONSTITUTION:In the heat treatment of single crystal, the temperature of crystal habit line portion is made lower than the other portions at the time of temperature rising, whereas is made higher than the other portions at the time of temperature lowering so that the inflow and outflow of heat is made uniformly in order to prevent the occurrence of heat stress at the crystal habit line. For example, in the case of silicon (III) crystal, heat treatment is conducted under the condition in which a temperature distribution having a vertical section in the direction of crystal growth, like the temperature distribution curve 61, is produced at the time of temperature rising.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15022177A JPS5481179A (en) | 1977-12-13 | 1977-12-13 | Heat treatment of single crystal |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15022177A JPS5481179A (en) | 1977-12-13 | 1977-12-13 | Heat treatment of single crystal |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5481179A true JPS5481179A (en) | 1979-06-28 |
Family
ID=15492172
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15022177A Pending JPS5481179A (en) | 1977-12-13 | 1977-12-13 | Heat treatment of single crystal |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5481179A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014103333A (en) * | 2012-11-22 | 2014-06-05 | Shin Etsu Handotai Co Ltd | Heat treatment method of silicon wafer |
-
1977
- 1977-12-13 JP JP15022177A patent/JPS5481179A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014103333A (en) * | 2012-11-22 | 2014-06-05 | Shin Etsu Handotai Co Ltd | Heat treatment method of silicon wafer |
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