JPS5481179A - Heat treatment of single crystal - Google Patents

Heat treatment of single crystal

Info

Publication number
JPS5481179A
JPS5481179A JP15022177A JP15022177A JPS5481179A JP S5481179 A JPS5481179 A JP S5481179A JP 15022177 A JP15022177 A JP 15022177A JP 15022177 A JP15022177 A JP 15022177A JP S5481179 A JPS5481179 A JP S5481179A
Authority
JP
Japan
Prior art keywords
crystal
temperature
heat treatment
heat
single crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15022177A
Other languages
Japanese (ja)
Inventor
Fumio Shimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP15022177A priority Critical patent/JPS5481179A/en
Publication of JPS5481179A publication Critical patent/JPS5481179A/en
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE:To obtain high quality single crystal by eliminating the concentration of heat stress on crystal habit line and preventing the occurrence of slide transfer by the procedure in which heat treatment is conducted under the condition in which the temperature inside furnace is made to have an anisotropy and the inflow and outflow of heat from crystal surface is made uniformly. CONSTITUTION:In the heat treatment of single crystal, the temperature of crystal habit line portion is made lower than the other portions at the time of temperature rising, whereas is made higher than the other portions at the time of temperature lowering so that the inflow and outflow of heat is made uniformly in order to prevent the occurrence of heat stress at the crystal habit line. For example, in the case of silicon (III) crystal, heat treatment is conducted under the condition in which a temperature distribution having a vertical section in the direction of crystal growth, like the temperature distribution curve 61, is produced at the time of temperature rising.
JP15022177A 1977-12-13 1977-12-13 Heat treatment of single crystal Pending JPS5481179A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15022177A JPS5481179A (en) 1977-12-13 1977-12-13 Heat treatment of single crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15022177A JPS5481179A (en) 1977-12-13 1977-12-13 Heat treatment of single crystal

Publications (1)

Publication Number Publication Date
JPS5481179A true JPS5481179A (en) 1979-06-28

Family

ID=15492172

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15022177A Pending JPS5481179A (en) 1977-12-13 1977-12-13 Heat treatment of single crystal

Country Status (1)

Country Link
JP (1) JPS5481179A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014103333A (en) * 2012-11-22 2014-06-05 Shin Etsu Handotai Co Ltd Heat treatment method of silicon wafer

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014103333A (en) * 2012-11-22 2014-06-05 Shin Etsu Handotai Co Ltd Heat treatment method of silicon wafer

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