JPS5480093A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5480093A JPS5480093A JP14787177A JP14787177A JPS5480093A JP S5480093 A JPS5480093 A JP S5480093A JP 14787177 A JP14787177 A JP 14787177A JP 14787177 A JP14787177 A JP 14787177A JP S5480093 A JPS5480093 A JP S5480093A
- Authority
- JP
- Japan
- Prior art keywords
- film
- pattern
- etching
- coated
- concavity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE: To obtain a minute wirng pattern with use of Pt by providing the opening at electrode forming region of the insulator film coated on the semiconductor substrate, coating the laminated conducting film of Ti and Al there, drilling the concavity on the Ti film through etching and covering the concavity with the Au plating after filling with the Pt layer.
CONSTITUTION: The laminated conducting film of Ti film 303 and Al film 305 is coated on the surface of semiconductor substrate 301 which contains the prescribed PN junction with insulator film 302 covering the surface except for the electrode draw-out window. Then the anode oxidation is given to grow Al2O3 film 308 on the surface with photo resist pattern 306 adverse to the wir ing line provided. Using pattern 306 as the mask, film 308 and 305 are removed selectively through etching. After this, the Pt film is deposited on the entire surface to exfoliate film 308 to obtain Pt wiring pattern 304 on exposed film 303, and Au film 307 is coated on the surface of pattern 304. The unnecessary film 308 and 305 are removed through etching, and then exposed film 302 is also removed. Thus, the wiring of 3- layer structure (Ti-Pt-Au) is obtained.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14787177A JPS6038024B2 (en) | 1977-12-08 | 1977-12-08 | Manufacturing method of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14787177A JPS6038024B2 (en) | 1977-12-08 | 1977-12-08 | Manufacturing method of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5480093A true JPS5480093A (en) | 1979-06-26 |
| JPS6038024B2 JPS6038024B2 (en) | 1985-08-29 |
Family
ID=15440112
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14787177A Expired JPS6038024B2 (en) | 1977-12-08 | 1977-12-08 | Manufacturing method of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6038024B2 (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6345835A (en) * | 1986-08-13 | 1988-02-26 | Nec Corp | Semiconductor device |
| JPS63164338A (en) * | 1986-12-26 | 1988-07-07 | Nec Corp | Manufacture of semiconductor device |
| JPH03114228A (en) * | 1990-04-13 | 1991-05-15 | Seiko Epson Corp | Manufacture of semiconductor device having metal-plated wiring |
| JPH06224152A (en) * | 1993-01-27 | 1994-08-12 | Nec Corp | Semiconductor device and manufacture thereof |
| JP2018046237A (en) * | 2016-09-16 | 2018-03-22 | 株式会社東芝 | Semiconductor device and manufacturing method of the same |
-
1977
- 1977-12-08 JP JP14787177A patent/JPS6038024B2/en not_active Expired
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6345835A (en) * | 1986-08-13 | 1988-02-26 | Nec Corp | Semiconductor device |
| JPS63164338A (en) * | 1986-12-26 | 1988-07-07 | Nec Corp | Manufacture of semiconductor device |
| JPH03114228A (en) * | 1990-04-13 | 1991-05-15 | Seiko Epson Corp | Manufacture of semiconductor device having metal-plated wiring |
| JPH06224152A (en) * | 1993-01-27 | 1994-08-12 | Nec Corp | Semiconductor device and manufacture thereof |
| JP2018046237A (en) * | 2016-09-16 | 2018-03-22 | 株式会社東芝 | Semiconductor device and manufacturing method of the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6038024B2 (en) | 1985-08-29 |
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