JPS5478952A - Variable attenuator - Google Patents

Variable attenuator

Info

Publication number
JPS5478952A
JPS5478952A JP14605277A JP14605277A JPS5478952A JP S5478952 A JPS5478952 A JP S5478952A JP 14605277 A JP14605277 A JP 14605277A JP 14605277 A JP14605277 A JP 14605277A JP S5478952 A JPS5478952 A JP S5478952A
Authority
JP
Japan
Prior art keywords
voltage
drain
source
normal operation
fet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14605277A
Other languages
Japanese (ja)
Inventor
Harushige Nakagaki
Shunji Iwasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP14605277A priority Critical patent/JPS5478952A/en
Publication of JPS5478952A publication Critical patent/JPS5478952A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H11/00—Networks using active elements
    • H03H11/02—Multiple-port networks
    • H03H11/24—Frequency-independent attenuators
    • H03H11/245—Frequency-independent attenuators using field-effect transistor

Landscapes

  • Networks Using Active Elements (AREA)

Abstract

PURPOSE:To establish the potentimeter unit having less distortion, by operating with the normal operation region with the DC voltage superimposed of the polarity of the normal operation region of FET on AC input signal, in the variable attenuator consisting of impedance element and FET element. CONSTITUTION:DC bias 35 is superimposed on the signal source 34, the bias voltage of -VDD is given between the drain and source of MOSFET 10, operating it only at the normal operation region of FET 10. The resistors 11 and 12 are taken equal and the voltage having the amplitude 1/2 of the signal voltage across the drain and source is fed back to the gate 1, eliminating the saturation of the voltage VDS between the drain and source and the drain current ID characteristics. Thus, the output conductance GDS between the drain 2 and the sorce 3 of FET10 is almost determined with the gate bias voltage VGS, and the straight line part of VDS-ID characteristics is utilized, then the electronic potentiometer less in amplitude distortion can be obtained by varying the gate bias 7.
JP14605277A 1977-12-07 1977-12-07 Variable attenuator Pending JPS5478952A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14605277A JPS5478952A (en) 1977-12-07 1977-12-07 Variable attenuator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14605277A JPS5478952A (en) 1977-12-07 1977-12-07 Variable attenuator

Publications (1)

Publication Number Publication Date
JPS5478952A true JPS5478952A (en) 1979-06-23

Family

ID=15398997

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14605277A Pending JPS5478952A (en) 1977-12-07 1977-12-07 Variable attenuator

Country Status (1)

Country Link
JP (1) JPS5478952A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62210711A (en) * 1986-03-12 1987-09-16 Matsushita Electric Ind Co Ltd Variable attenuator

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62210711A (en) * 1986-03-12 1987-09-16 Matsushita Electric Ind Co Ltd Variable attenuator

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