JPS5460855A - Measurement device for deep level of semiconductor device - Google Patents
Measurement device for deep level of semiconductor deviceInfo
- Publication number
- JPS5460855A JPS5460855A JP12802377A JP12802377A JPS5460855A JP S5460855 A JPS5460855 A JP S5460855A JP 12802377 A JP12802377 A JP 12802377A JP 12802377 A JP12802377 A JP 12802377A JP S5460855 A JPS5460855 A JP S5460855A
- Authority
- JP
- Japan
- Prior art keywords
- circuit
- sample
- signal
- holding
- time
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
PURPOSE: To obtain a small-sized and simple-structure measurement deivce by using two units of the sample holding element featuring the acquisition time which is shorter enough than the period of the periodic input signal and a sufficiently long holding time respectively.
CONSTITUTION: The periodic pulse voltage given from pulse voltage generator 21 is applied to measured semiconductor device test sample 20 to vary the junction capacity of sample 20. And the analog signal following the change of the junction capacity is applied to gate circuit 24 via capacitance meter 23. At the same time, circuit 24 is actuated by the control pulse signal sent from control pulse signal generator 22, and part of the analog signal is supplied to amplifier circuit 25 to be amplified. The amplified signals are then applied to independent sample holding circuit 26 and 27. In this case, the acquisition time and the holding time atteunation are reduced for circuit 26 and 27. After this, the signals are applied to differential amplifier 28 to cause the difference signal, and the recording is carried out via XY recording meter 30 while sweeping the temperature of sample 20
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12802377A JPS5460855A (en) | 1977-10-24 | 1977-10-24 | Measurement device for deep level of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12802377A JPS5460855A (en) | 1977-10-24 | 1977-10-24 | Measurement device for deep level of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5460855A true JPS5460855A (en) | 1979-05-16 |
JPS5731658B2 JPS5731658B2 (en) | 1982-07-06 |
Family
ID=14974567
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12802377A Granted JPS5460855A (en) | 1977-10-24 | 1977-10-24 | Measurement device for deep level of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5460855A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017026446A (en) * | 2015-07-22 | 2017-02-02 | 京セラ株式会社 | Method for measuring current collapse |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60225050A (en) * | 1984-04-24 | 1985-11-09 | Ngk Spark Plug Co Ltd | Gas component detector |
-
1977
- 1977-10-24 JP JP12802377A patent/JPS5460855A/en active Granted
Non-Patent Citations (1)
Title |
---|
JOURUAL OF APPLIED PHYICS=1974 * |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017026446A (en) * | 2015-07-22 | 2017-02-02 | 京セラ株式会社 | Method for measuring current collapse |
Also Published As
Publication number | Publication date |
---|---|
JPS5731658B2 (en) | 1982-07-06 |
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