JPS5458700A - Production of alpha-type silicon nitride - Google Patents
Production of alpha-type silicon nitrideInfo
- Publication number
- JPS5458700A JPS5458700A JP12525677A JP12525677A JPS5458700A JP S5458700 A JPS5458700 A JP S5458700A JP 12525677 A JP12525677 A JP 12525677A JP 12525677 A JP12525677 A JP 12525677A JP S5458700 A JPS5458700 A JP S5458700A
- Authority
- JP
- Japan
- Prior art keywords
- powder
- nitriding
- silicon nitride
- type silicon
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B21/00—Nitrogen; Compounds thereof
- C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
- C01B21/068—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with silicon
- C01B21/0682—Preparation by direct nitridation of silicon
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Ceramic Products (AREA)
Abstract
PURPOSE: To produce Si3N4 of high α-type content in a short time by mixing Si powder with a small amt. of PdO powder and heating the mixt. to a specific temp. in a nitriding gas atmosphere.
CONSTITUTION: 99.5W94 pts. wt. of Si powder with a purity above 98% and a grain size of 5-15μ are uniformly mixed with 0.5W6 pts. wt. of PdO powder with agrain size equal to or smaller than the above one. The mixt. is then heated to 1350W1500°C in a nitriding gas atmosphere contg. N2 gas, NH3 gas, etc. to carry out nitriding reaction. Inert gases such as He and Ar may be contained in the stmosphere. The time necessary for the reaction can be varied suitably by selecting the compsn. of the raw material powder and the nitriding temp., yet high purity α-type silicon nitride whose α-type Si3N4 content is more than 85% can be obtd. in a short time
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12525677A JPS5458700A (en) | 1977-10-19 | 1977-10-19 | Production of alpha-type silicon nitride |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12525677A JPS5458700A (en) | 1977-10-19 | 1977-10-19 | Production of alpha-type silicon nitride |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5458700A true JPS5458700A (en) | 1979-05-11 |
Family
ID=14905591
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12525677A Pending JPS5458700A (en) | 1977-10-19 | 1977-10-19 | Production of alpha-type silicon nitride |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5458700A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0628514A1 (en) * | 1993-06-11 | 1994-12-14 | Shin-Etsu Chemical Co., Ltd. | Preparation of high alpha-type silicon nitride powder |
CN106395769A (en) * | 2016-08-26 | 2017-02-15 | 河北高富氮化硅材料有限公司 | Method for preparing high purity high alpha phase silicon nitride powder |
-
1977
- 1977-10-19 JP JP12525677A patent/JPS5458700A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0628514A1 (en) * | 1993-06-11 | 1994-12-14 | Shin-Etsu Chemical Co., Ltd. | Preparation of high alpha-type silicon nitride powder |
CN106395769A (en) * | 2016-08-26 | 2017-02-15 | 河北高富氮化硅材料有限公司 | Method for preparing high purity high alpha phase silicon nitride powder |
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