JPS5456387A - Semiconductor - Google Patents

Semiconductor

Info

Publication number
JPS5456387A
JPS5456387A JP7923978A JP7923978A JPS5456387A JP S5456387 A JPS5456387 A JP S5456387A JP 7923978 A JP7923978 A JP 7923978A JP 7923978 A JP7923978 A JP 7923978A JP S5456387 A JPS5456387 A JP S5456387A
Authority
JP
Japan
Prior art keywords
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7923978A
Other languages
Japanese (ja)
Other versions
JPS5544471B2 (en
Inventor
Hayashi Izuo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of JPS5456387A publication Critical patent/JPS5456387A/en
Publication of JPS5544471B2 publication Critical patent/JPS5544471B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/30Structure or shape of the active region; Materials used for the active region
    • H01S5/32Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32316Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm comprising only (Al)GaAs

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Semiconductor Lasers (AREA)
JP7923978A 1970-05-01 1978-06-29 Semiconductor Granted JPS5456387A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US3370570A 1970-05-01 1970-05-01

Publications (2)

Publication Number Publication Date
JPS5456387A true JPS5456387A (en) 1979-05-07
JPS5544471B2 JPS5544471B2 (en) 1980-11-12

Family

ID=21871982

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2731971A Pending JPS541153B1 (en) 1970-05-01 1971-04-27
JP7923978A Granted JPS5456387A (en) 1970-05-01 1978-06-29 Semiconductor

Family Applications Before (1)

Application Number Title Priority Date Filing Date
JP2731971A Pending JPS541153B1 (en) 1970-05-01 1971-04-27

Country Status (6)

Country Link
JP (2) JPS541153B1 (en)
KR (1) KR780000083B1 (en)
CA (1) CA977448A (en)
ES (1) ES391099A1 (en)
IE (1) IE35169B1 (en)
SE (1) SE374467B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01225115A (en) * 1988-03-04 1989-09-08 Mitsubishi Monsanto Chem Co Epitaxial-wafer

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01225115A (en) * 1988-03-04 1989-09-08 Mitsubishi Monsanto Chem Co Epitaxial-wafer

Also Published As

Publication number Publication date
JPS5544471B2 (en) 1980-11-12
CA977448A (en) 1975-11-04
KR780000083B1 (en) 1978-03-30
SE374467B (en) 1975-03-03
IE35169B1 (en) 1975-11-26
ES391099A1 (en) 1974-11-16
IE35169L (en) 1971-11-01
JPS541153B1 (en) 1979-01-20

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