JPS5441085A - Insulated gate field effect semiconductor device - Google Patents

Insulated gate field effect semiconductor device

Info

Publication number
JPS5441085A
JPS5441085A JP10823977A JP10823977A JPS5441085A JP S5441085 A JPS5441085 A JP S5441085A JP 10823977 A JP10823977 A JP 10823977A JP 10823977 A JP10823977 A JP 10823977A JP S5441085 A JPS5441085 A JP S5441085A
Authority
JP
Japan
Prior art keywords
semiconductor device
field effect
insulated gate
gate field
effect semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10823977A
Other languages
Japanese (ja)
Inventor
Moichi Matsukuma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP10823977A priority Critical patent/JPS5441085A/en
Publication of JPS5441085A publication Critical patent/JPS5441085A/en
Pending legal-status Critical Current

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Abstract

PURPOSE: To reduce gate capacity and increase the operating speed of the device by narrowing the distance between the sources and drains of FETs thereby allowing punch-through to readily occur in the semiconductor device including IGFETs.
COPYRIGHT: (C)1979,JPO&Japio
JP10823977A 1977-09-07 1977-09-07 Insulated gate field effect semiconductor device Pending JPS5441085A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10823977A JPS5441085A (en) 1977-09-07 1977-09-07 Insulated gate field effect semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10823977A JPS5441085A (en) 1977-09-07 1977-09-07 Insulated gate field effect semiconductor device

Publications (1)

Publication Number Publication Date
JPS5441085A true JPS5441085A (en) 1979-03-31

Family

ID=14479591

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10823977A Pending JPS5441085A (en) 1977-09-07 1977-09-07 Insulated gate field effect semiconductor device

Country Status (1)

Country Link
JP (1) JPS5441085A (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50120970A (en) * 1974-03-11 1975-09-22
JPS51117878A (en) * 1975-04-09 1976-10-16 Nec Corp Manufacturing method of semiconductor device
JPS5226177A (en) * 1975-08-25 1977-02-26 Toshiba Corp Semi-conductor unit

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50120970A (en) * 1974-03-11 1975-09-22
JPS51117878A (en) * 1975-04-09 1976-10-16 Nec Corp Manufacturing method of semiconductor device
JPS5226177A (en) * 1975-08-25 1977-02-26 Toshiba Corp Semi-conductor unit

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