JPS5440533A - Semiconductor memory unit - Google Patents

Semiconductor memory unit

Info

Publication number
JPS5440533A
JPS5440533A JP10745677A JP10745677A JPS5440533A JP S5440533 A JPS5440533 A JP S5440533A JP 10745677 A JP10745677 A JP 10745677A JP 10745677 A JP10745677 A JP 10745677A JP S5440533 A JPS5440533 A JP S5440533A
Authority
JP
Japan
Prior art keywords
semiconductor memory
memory unit
nonvolatile
ensure
providing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10745677A
Other languages
Japanese (ja)
Other versions
JPS6145317B2 (en
Inventor
Kanichi Harima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP10745677A priority Critical patent/JPS5440533A/en
Publication of JPS5440533A publication Critical patent/JPS5440533A/en
Publication of JPS6145317B2 publication Critical patent/JPS6145317B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Static Random-Access Memory (AREA)
  • Non-Volatile Memory (AREA)

Abstract

PURPOSE:To ensure a high-efficiency reading for the nonvolatile semiconductor memory by providing the nonvolatile field effect type transistor.
JP10745677A 1977-09-06 1977-09-06 Semiconductor memory unit Granted JPS5440533A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10745677A JPS5440533A (en) 1977-09-06 1977-09-06 Semiconductor memory unit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10745677A JPS5440533A (en) 1977-09-06 1977-09-06 Semiconductor memory unit

Publications (2)

Publication Number Publication Date
JPS5440533A true JPS5440533A (en) 1979-03-30
JPS6145317B2 JPS6145317B2 (en) 1986-10-07

Family

ID=14459619

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10745677A Granted JPS5440533A (en) 1977-09-06 1977-09-06 Semiconductor memory unit

Country Status (1)

Country Link
JP (1) JPS5440533A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60148000A (en) * 1984-01-09 1985-08-05 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Memory

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60148000A (en) * 1984-01-09 1985-08-05 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Memory
JPH0368479B2 (en) * 1984-01-09 1991-10-28 Intaanashonaru Bijinesu Mashiinzu Corp

Also Published As

Publication number Publication date
JPS6145317B2 (en) 1986-10-07

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