JPS5417655A - Bistable latch circuit - Google Patents

Bistable latch circuit

Info

Publication number
JPS5417655A
JPS5417655A JP7707378A JP7707378A JPS5417655A JP S5417655 A JPS5417655 A JP S5417655A JP 7707378 A JP7707378 A JP 7707378A JP 7707378 A JP7707378 A JP 7707378A JP S5417655 A JPS5417655 A JP S5417655A
Authority
JP
Japan
Prior art keywords
latch circuit
bistable latch
bistable
circuit
latch
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7707378A
Other languages
Japanese (ja)
Inventor
Harari Eriyahou
Daburiyu Edowaazu Korin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Raytheon Co
Original Assignee
Hughes Aircraft Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US05/819,794 external-priority patent/US4132904A/en
Application filed by Hughes Aircraft Co filed Critical Hughes Aircraft Co
Publication of JPS5417655A publication Critical patent/JPS5417655A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C14/00Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/04Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/788Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881Programmable transistors with only two possible levels of programmation
    • H01L29/7883Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K3/00Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356Bistable circuits
    • H03K3/356008Bistable circuits ensuring a predetermined initial state when the supply voltage has been applied; storing the actual state when the supply voltage fails
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B10/00Static random access memory [SRAM] devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B10/00Static random access memory [SRAM] devices
    • H10B10/12Static random access memory [SRAM] devices comprising a MOSFET load element
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B10/00Static random access memory [SRAM] devices
    • H10B10/15Static random access memory [SRAM] devices comprising a resistor load element
JP7707378A 1977-06-27 1978-06-27 Bistable latch circuit Pending JPS5417655A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB2687677 1977-06-27
US05/819,794 US4132904A (en) 1977-07-28 1977-07-28 Volatile/non-volatile logic latch circuit

Publications (1)

Publication Number Publication Date
JPS5417655A true JPS5417655A (en) 1979-02-09

Family

ID=26258480

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7707378A Pending JPS5417655A (en) 1977-06-27 1978-06-27 Bistable latch circuit

Country Status (8)

Country Link
JP (1) JPS5417655A (en)
CH (1) CH641587A5 (en)
DE (1) DE2827165C3 (en)
FR (1) FR2396457A1 (en)
GB (1) GB2000407B (en)
HK (1) HK37082A (en)
IT (1) IT1105369B (en)
NL (1) NL7806632A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012195028A (en) * 2011-03-15 2012-10-11 Toshiba Corp Nonvolatile configuration memory

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4245165A (en) * 1978-11-29 1981-01-13 International Business Machines Corporation Reversible electrically variable active parameter trimming apparatus utilizing floating gate as control
GB2063601B (en) * 1979-11-12 1984-02-29 Hughes Microelectronics Ltd Non-volatile semiconductor memory circuits
US4387444A (en) * 1980-07-07 1983-06-07 Hughes Aircraft Company Non-volatile semiconductor memory cells
GB2093302B (en) * 1981-02-17 1984-07-18 Hughes Microelectronic Ltd Non-volatile semiconductor memory circuits
GB2104748B (en) * 1981-08-25 1985-01-30 Hughes Microelectronics Ltd Non-volatile semiconductor memory circuits
EP0311146A1 (en) * 1981-11-23 1989-04-12 Fairchild Semiconductor Corporation Self-refreshing memory cell
DE3280258D1 (en) * 1981-11-23 1990-11-15 Fairchild Semiconductor STORAGE CELL WITH SELF REFRESHING.
JPS6199413A (en) * 1984-10-19 1986-05-17 Mitsubishi Electric Corp Output circuit device
GB2171571B (en) * 1985-02-27 1989-06-14 Hughes Microelectronics Ltd Non-volatile memory with predictable failure modes and method of data storage and retrieval
GB8807225D0 (en) * 1988-03-25 1988-04-27 Hughes Microelectronics Ltd Nonvolatile ram cell
JPH01304772A (en) * 1988-06-02 1989-12-08 Seiko Instr Inc Non-volatile static ram circuit
FR2836752A1 (en) * 2002-02-11 2003-09-05 St Microelectronics Sa SINGLE PROGRAMMED MEMORY CELL
FR2835947A1 (en) 2002-02-11 2003-08-15 St Microelectronics Sa EXTRACTION OF A BINARY CODE FROM PHYSICAL PARAMETERS OF AN INTEGRATED CIRCUIT
US6906962B2 (en) * 2002-09-30 2005-06-14 Agere Systems Inc. Method for defining the initial state of static random access memory
DE102008003385A1 (en) * 2008-01-07 2009-07-09 Qimonda Ag Flip-flop circuit i.e. latch, for e.g. electronic component, has transmission circuit designed to couple signal and control signal strongly at node and to couple signal weakly at node without control signal or to decouple signal from node

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5219085A (en) * 1975-08-06 1977-01-14 Nec Corp Semiconductor device

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3590337A (en) * 1968-10-14 1971-06-29 Sperry Rand Corp Plural dielectric layered electrically alterable non-destructive readout memory element
US3636530A (en) * 1969-09-10 1972-01-18 Litton Systems Inc Nonvolatile direct storage bistable circuit
US3676717A (en) * 1970-11-02 1972-07-11 Ncr Co Nonvolatile flip-flop memory cell
US3755791A (en) * 1972-06-01 1973-08-28 Ibm Memory system with temporary or permanent substitution of cells for defective cells
DE2339289C2 (en) * 1973-08-02 1975-02-06 Siemens Ag, 1000 Berlin Und 8000 Muenchen Bistable multivibrator with MNOS transistors
US4095281A (en) * 1976-03-04 1978-06-13 Rca Corporation Random access-erasable read only memory cell

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5219085A (en) * 1975-08-06 1977-01-14 Nec Corp Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012195028A (en) * 2011-03-15 2012-10-11 Toshiba Corp Nonvolatile configuration memory

Also Published As

Publication number Publication date
FR2396457B1 (en) 1983-09-16
DE2827165C3 (en) 1984-10-25
GB2000407B (en) 1982-01-27
IT7850030A0 (en) 1978-06-27
CH641587A5 (en) 1984-02-29
GB2000407A (en) 1979-01-04
HK37082A (en) 1982-08-27
IT1105369B (en) 1985-10-28
FR2396457A1 (en) 1979-01-26
DE2827165A1 (en) 1979-01-04
DE2827165B2 (en) 1979-06-21
NL7806632A (en) 1978-12-29

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