JPS5416986A - Semiconductor non-volatile memory device - Google Patents

Semiconductor non-volatile memory device

Info

Publication number
JPS5416986A
JPS5416986A JP8096577A JP8096577A JPS5416986A JP S5416986 A JPS5416986 A JP S5416986A JP 8096577 A JP8096577 A JP 8096577A JP 8096577 A JP8096577 A JP 8096577A JP S5416986 A JPS5416986 A JP S5416986A
Authority
JP
Japan
Prior art keywords
volatile memory
memory device
semiconductor non
diode
applying
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8096577A
Other languages
Japanese (ja)
Other versions
JPS6026303B2 (en
Inventor
Ryuji Kondo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP52080965A priority Critical patent/JPS6026303B2/en
Publication of JPS5416986A publication Critical patent/JPS5416986A/en
Publication of JPS6026303B2 publication Critical patent/JPS6026303B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Non-Volatile Memory (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Read Only Memory (AREA)

Abstract

PURPOSE:To make possible stable write erasing suitable for high integration by forming a non-volatile memory element with one MOS type transistor and one diode having a charge accumulating layer and applying this to a capacity read system.
JP52080965A 1977-07-08 1977-07-08 Semiconductor nonvolatile memory device Expired JPS6026303B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP52080965A JPS6026303B2 (en) 1977-07-08 1977-07-08 Semiconductor nonvolatile memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP52080965A JPS6026303B2 (en) 1977-07-08 1977-07-08 Semiconductor nonvolatile memory device

Publications (2)

Publication Number Publication Date
JPS5416986A true JPS5416986A (en) 1979-02-07
JPS6026303B2 JPS6026303B2 (en) 1985-06-22

Family

ID=13733218

Family Applications (1)

Application Number Title Priority Date Filing Date
JP52080965A Expired JPS6026303B2 (en) 1977-07-08 1977-07-08 Semiconductor nonvolatile memory device

Country Status (1)

Country Link
JP (1) JPS6026303B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57113485A (en) * 1981-01-02 1982-07-14 Ibm Memory
JPS59967A (en) * 1983-06-03 1984-01-06 Hitachi Ltd Semiconductor nonvolatile memory
JPS59221893A (en) * 1983-05-31 1984-12-13 Toshiba Corp Nonvolatile semiconductor memory

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0121222Y2 (en) * 1985-06-25 1989-06-26
JPH0198302U (en) * 1987-12-21 1989-06-30

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57113485A (en) * 1981-01-02 1982-07-14 Ibm Memory
JPS6322626B2 (en) * 1981-01-02 1988-05-12 Intaanashonaru Bijinesu Mashiinzu Corp
JPS59221893A (en) * 1983-05-31 1984-12-13 Toshiba Corp Nonvolatile semiconductor memory
JPS6322398B2 (en) * 1983-05-31 1988-05-11 Tokyo Shibaura Electric Co
JPS59967A (en) * 1983-06-03 1984-01-06 Hitachi Ltd Semiconductor nonvolatile memory

Also Published As

Publication number Publication date
JPS6026303B2 (en) 1985-06-22

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