JPS54132178A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS54132178A JPS54132178A JP4074878A JP4074878A JPS54132178A JP S54132178 A JPS54132178 A JP S54132178A JP 4074878 A JP4074878 A JP 4074878A JP 4074878 A JP4074878 A JP 4074878A JP S54132178 A JPS54132178 A JP S54132178A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- vacuum
- coated
- film
- semiconductor substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE: To obtain a highly reliable wiring layer by using the laminated Al via the sputtering method and the vacuum evaporation method when forming the lead-out wiring covering from the element region provided to the semiconductor substrate onto the insulator film.
CONSTITUTION: SiO2 film 12 is coated on semiconductor substrate 11 to which the prescribed circuit elements are provided, with openings 13W16 drilled. And 1st metal layer 17 mainly composed of Al is evaporated on the entire surface in the low-vacuum atmosphere via the spottering method. Thus, layer 17 does not cause the disconnection due to the uneven surface of substrate 11 because layer 17 features a high step coverage. Then 2nd metal layer 18 composed mainly of Al with the dense and smooth surface is coated on layer 17 through the vacuum evaporation method using a high degree of vacuum and at 150W350°C, and only the surface layer part of layer 18 is converted into porous Al2O3 layer 19 through the anodic oxidation. After this, photo resist film 20 is provided selectively to obtain the lamination wiring featuring a prescribed form for layer 18 and 17 through the selective etching.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4074878A JPS54132178A (en) | 1978-04-05 | 1978-04-05 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4074878A JPS54132178A (en) | 1978-04-05 | 1978-04-05 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54132178A true JPS54132178A (en) | 1979-10-13 |
Family
ID=12589244
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4074878A Pending JPS54132178A (en) | 1978-04-05 | 1978-04-05 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54132178A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58108738A (en) * | 1981-12-22 | 1983-06-28 | Seiko Instr & Electronics Ltd | Manufacture of electrode for semiconductor device |
CN110349925A (en) * | 2019-07-16 | 2019-10-18 | 上海航天电子通讯设备研究所 | A kind of stacked package substrate and preparation method thereof |
JP2020126803A (en) * | 2019-02-06 | 2020-08-20 | 日産自動車株式会社 | Resin current collector for bipolar secondary battery |
-
1978
- 1978-04-05 JP JP4074878A patent/JPS54132178A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58108738A (en) * | 1981-12-22 | 1983-06-28 | Seiko Instr & Electronics Ltd | Manufacture of electrode for semiconductor device |
JP2020126803A (en) * | 2019-02-06 | 2020-08-20 | 日産自動車株式会社 | Resin current collector for bipolar secondary battery |
CN110349925A (en) * | 2019-07-16 | 2019-10-18 | 上海航天电子通讯设备研究所 | A kind of stacked package substrate and preparation method thereof |
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