JPS54132178A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS54132178A
JPS54132178A JP4074878A JP4074878A JPS54132178A JP S54132178 A JPS54132178 A JP S54132178A JP 4074878 A JP4074878 A JP 4074878A JP 4074878 A JP4074878 A JP 4074878A JP S54132178 A JPS54132178 A JP S54132178A
Authority
JP
Japan
Prior art keywords
layer
vacuum
coated
film
semiconductor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4074878A
Other languages
Japanese (ja)
Inventor
Tsunehiro Taguchi
Toshio Wada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP4074878A priority Critical patent/JPS54132178A/en
Publication of JPS54132178A publication Critical patent/JPS54132178A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE: To obtain a highly reliable wiring layer by using the laminated Al via the sputtering method and the vacuum evaporation method when forming the lead-out wiring covering from the element region provided to the semiconductor substrate onto the insulator film.
CONSTITUTION: SiO2 film 12 is coated on semiconductor substrate 11 to which the prescribed circuit elements are provided, with openings 13W16 drilled. And 1st metal layer 17 mainly composed of Al is evaporated on the entire surface in the low-vacuum atmosphere via the spottering method. Thus, layer 17 does not cause the disconnection due to the uneven surface of substrate 11 because layer 17 features a high step coverage. Then 2nd metal layer 18 composed mainly of Al with the dense and smooth surface is coated on layer 17 through the vacuum evaporation method using a high degree of vacuum and at 150W350°C, and only the surface layer part of layer 18 is converted into porous Al2O3 layer 19 through the anodic oxidation. After this, photo resist film 20 is provided selectively to obtain the lamination wiring featuring a prescribed form for layer 18 and 17 through the selective etching.
COPYRIGHT: (C)1979,JPO&Japio
JP4074878A 1978-04-05 1978-04-05 Semiconductor device Pending JPS54132178A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4074878A JPS54132178A (en) 1978-04-05 1978-04-05 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4074878A JPS54132178A (en) 1978-04-05 1978-04-05 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS54132178A true JPS54132178A (en) 1979-10-13

Family

ID=12589244

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4074878A Pending JPS54132178A (en) 1978-04-05 1978-04-05 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS54132178A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58108738A (en) * 1981-12-22 1983-06-28 Seiko Instr & Electronics Ltd Manufacture of electrode for semiconductor device
CN110349925A (en) * 2019-07-16 2019-10-18 上海航天电子通讯设备研究所 A kind of stacked package substrate and preparation method thereof
JP2020126803A (en) * 2019-02-06 2020-08-20 日産自動車株式会社 Resin current collector for bipolar secondary battery

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58108738A (en) * 1981-12-22 1983-06-28 Seiko Instr & Electronics Ltd Manufacture of electrode for semiconductor device
JP2020126803A (en) * 2019-02-06 2020-08-20 日産自動車株式会社 Resin current collector for bipolar secondary battery
CN110349925A (en) * 2019-07-16 2019-10-18 上海航天电子通讯设备研究所 A kind of stacked package substrate and preparation method thereof

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