JPS54126462A - Production of semiconductor device - Google Patents
Production of semiconductor deviceInfo
- Publication number
- JPS54126462A JPS54126462A JP3437178A JP3437178A JPS54126462A JP S54126462 A JPS54126462 A JP S54126462A JP 3437178 A JP3437178 A JP 3437178A JP 3437178 A JP3437178 A JP 3437178A JP S54126462 A JPS54126462 A JP S54126462A
- Authority
- JP
- Japan
- Prior art keywords
- gold
- layer
- mask
- substance
- sio
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Thyristors (AREA)
Abstract
PURPOSE: To realize simultaneously a high dielectric strength, a large capacity, and a high-speed production by diffusing gold after diffusing B into the p layer of pn junction with a depth over 15μm over 5×1019/cc.
CONSTITUTION: After SiO2 mask 2 is used to form selectively a n layer on one main face of a pnp-structure Si substance, the SiO2 mask is use again to accumulate B on the other main face. P+ layer is formed by driving-in with the processing at 1250°C for several hours, and a surface area of 5×1019/cc and a depth over 15μm is given to this layer. Next, the mask is removed to evaporate gold 5, and gold 5 is diffused at a prescribed temperature, and Si substance 1 is fixed to electrode support plate 4 with Al soldering material 3 by alloying. Thus, since distortion is generated inside Si by high-density B to increase a dislocation density and facilitate gold diffusion, the turn-off time is effectively shortened by a small amount of gold diffusion, and the forward voltage drop and the leakage current are reduced, and the ohmic contact between support plate 4 and substance 1 becomes well, so that a high-performance device can be obtained.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3437178A JPS5938730B2 (en) | 1978-03-24 | 1978-03-24 | Manufacturing method of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3437178A JPS5938730B2 (en) | 1978-03-24 | 1978-03-24 | Manufacturing method of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS54126462A true JPS54126462A (en) | 1979-10-01 |
JPS5938730B2 JPS5938730B2 (en) | 1984-09-19 |
Family
ID=12412301
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3437178A Expired JPS5938730B2 (en) | 1978-03-24 | 1978-03-24 | Manufacturing method of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5938730B2 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5848964A (en) * | 1981-09-18 | 1983-03-23 | Toyo Electric Mfg Co Ltd | Forming method for junction of reverse conducting thyristor |
JPS5852873A (en) * | 1981-09-25 | 1983-03-29 | Toyo Electric Mfg Co Ltd | Forming method for junction of reverse conducting thyristor |
JPS58207674A (en) * | 1982-05-29 | 1983-12-03 | Toshiba Corp | Preparation of thyristor |
-
1978
- 1978-03-24 JP JP3437178A patent/JPS5938730B2/en not_active Expired
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5848964A (en) * | 1981-09-18 | 1983-03-23 | Toyo Electric Mfg Co Ltd | Forming method for junction of reverse conducting thyristor |
JPS5852873A (en) * | 1981-09-25 | 1983-03-29 | Toyo Electric Mfg Co Ltd | Forming method for junction of reverse conducting thyristor |
JPS58207674A (en) * | 1982-05-29 | 1983-12-03 | Toshiba Corp | Preparation of thyristor |
JPH0328834B2 (en) * | 1982-05-29 | 1991-04-22 | Tokyo Shibaura Electric Co |
Also Published As
Publication number | Publication date |
---|---|
JPS5938730B2 (en) | 1984-09-19 |
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