JPS54126462A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS54126462A
JPS54126462A JP3437178A JP3437178A JPS54126462A JP S54126462 A JPS54126462 A JP S54126462A JP 3437178 A JP3437178 A JP 3437178A JP 3437178 A JP3437178 A JP 3437178A JP S54126462 A JPS54126462 A JP S54126462A
Authority
JP
Japan
Prior art keywords
gold
layer
mask
substance
sio
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3437178A
Other languages
Japanese (ja)
Other versions
JPS5938730B2 (en
Inventor
Kiyohiko Mihara
Akira Kawakami
Tsutomu Nakagawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP3437178A priority Critical patent/JPS5938730B2/en
Publication of JPS54126462A publication Critical patent/JPS54126462A/en
Publication of JPS5938730B2 publication Critical patent/JPS5938730B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Thyristors (AREA)

Abstract

PURPOSE: To realize simultaneously a high dielectric strength, a large capacity, and a high-speed production by diffusing gold after diffusing B into the p layer of pn junction with a depth over 15μm over 5×1019/cc.
CONSTITUTION: After SiO2 mask 2 is used to form selectively a n layer on one main face of a pnp-structure Si substance, the SiO2 mask is use again to accumulate B on the other main face. P+ layer is formed by driving-in with the processing at 1250°C for several hours, and a surface area of 5×1019/cc and a depth over 15μm is given to this layer. Next, the mask is removed to evaporate gold 5, and gold 5 is diffused at a prescribed temperature, and Si substance 1 is fixed to electrode support plate 4 with Al soldering material 3 by alloying. Thus, since distortion is generated inside Si by high-density B to increase a dislocation density and facilitate gold diffusion, the turn-off time is effectively shortened by a small amount of gold diffusion, and the forward voltage drop and the leakage current are reduced, and the ohmic contact between support plate 4 and substance 1 becomes well, so that a high-performance device can be obtained.
COPYRIGHT: (C)1979,JPO&Japio
JP3437178A 1978-03-24 1978-03-24 Manufacturing method of semiconductor device Expired JPS5938730B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3437178A JPS5938730B2 (en) 1978-03-24 1978-03-24 Manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3437178A JPS5938730B2 (en) 1978-03-24 1978-03-24 Manufacturing method of semiconductor device

Publications (2)

Publication Number Publication Date
JPS54126462A true JPS54126462A (en) 1979-10-01
JPS5938730B2 JPS5938730B2 (en) 1984-09-19

Family

ID=12412301

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3437178A Expired JPS5938730B2 (en) 1978-03-24 1978-03-24 Manufacturing method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5938730B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5848964A (en) * 1981-09-18 1983-03-23 Toyo Electric Mfg Co Ltd Forming method for junction of reverse conducting thyristor
JPS5852873A (en) * 1981-09-25 1983-03-29 Toyo Electric Mfg Co Ltd Forming method for junction of reverse conducting thyristor
JPS58207674A (en) * 1982-05-29 1983-12-03 Toshiba Corp Preparation of thyristor

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5848964A (en) * 1981-09-18 1983-03-23 Toyo Electric Mfg Co Ltd Forming method for junction of reverse conducting thyristor
JPS5852873A (en) * 1981-09-25 1983-03-29 Toyo Electric Mfg Co Ltd Forming method for junction of reverse conducting thyristor
JPS58207674A (en) * 1982-05-29 1983-12-03 Toshiba Corp Preparation of thyristor
JPH0328834B2 (en) * 1982-05-29 1991-04-22 Tokyo Shibaura Electric Co

Also Published As

Publication number Publication date
JPS5938730B2 (en) 1984-09-19

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