JPS54124879A - Ion beam deposition - Google Patents

Ion beam deposition

Info

Publication number
JPS54124879A
JPS54124879A JP3265778A JP3265778A JPS54124879A JP S54124879 A JPS54124879 A JP S54124879A JP 3265778 A JP3265778 A JP 3265778A JP 3265778 A JP3265778 A JP 3265778A JP S54124879 A JPS54124879 A JP S54124879A
Authority
JP
Japan
Prior art keywords
ion
ion beam
voltage
electrons
chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3265778A
Other languages
Japanese (ja)
Other versions
JPS569267B2 (en
Inventor
Toshio Kasai
Yoshio Adachi
Shojiro Miyake
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP3265778A priority Critical patent/JPS54124879A/en
Publication of JPS54124879A publication Critical patent/JPS54124879A/en
Publication of JPS569267B2 publication Critical patent/JPS569267B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/221—Ion beam deposition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/004—Charge control of objects or beams
    • H01J2237/0041—Neutralising arrangements

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

PURPOSE:For ion beam deposition of nonconducting material, a part of ion beam is collided with the inner face of the barrier to produce secondary electrons, both of the ions and electrons being projected onto the target to be neutralized there by exchanging electric charges. CONSTITUTION:A plasma 2 is formed by electron bombardment or the like in the chamber 1 filled with vapor to be deposited at a specified pressure. A high negative voltage is applied to the extracting electrode 5 which extends from the positive ion port 3 into the process chamber 4 to draw ion beam into the chamber 4. A part of the ion beam 6 is hit against the internal wall of the current pass barrier 7 having holes, producing electrons. The emitted secondary electrons and ion beams 8 are collided to the target 9 and neutralized while forming the deposited material 10. The applying voltage to the barrier plate 7 is limited by the ion collosion. Therefore, it must be lower that the potential of the plasma 2. About the same voltage as the draw voltage of the ion 6 is sufficient.
JP3265778A 1978-03-22 1978-03-22 Ion beam deposition Granted JPS54124879A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3265778A JPS54124879A (en) 1978-03-22 1978-03-22 Ion beam deposition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3265778A JPS54124879A (en) 1978-03-22 1978-03-22 Ion beam deposition

Publications (2)

Publication Number Publication Date
JPS54124879A true JPS54124879A (en) 1979-09-28
JPS569267B2 JPS569267B2 (en) 1981-02-28

Family

ID=12364926

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3265778A Granted JPS54124879A (en) 1978-03-22 1978-03-22 Ion beam deposition

Country Status (1)

Country Link
JP (1) JPS54124879A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5787056A (en) * 1980-09-24 1982-05-31 Varian Associates Method and device for strengthening neutralization of ion beam of positive charge
JPS5826441A (en) * 1981-08-10 1983-02-16 Nippon Telegr & Teleph Corp <Ntt> Ion implanting device
US4463255A (en) * 1980-09-24 1984-07-31 Varian Associates, Inc. Apparatus for enhanced neutralization of positively charged ion beam
US5136171A (en) * 1990-03-02 1992-08-04 Varian Associates, Inc. Charge neutralization apparatus for ion implantation system
US6610987B2 (en) * 2001-05-23 2003-08-26 Hitachi, Ltd. Apparatus and method of ion beam processing
JP2005015922A (en) * 2003-06-27 2005-01-20 Fei Co Proximity deposition method and system therefor
US7675049B2 (en) 2006-02-15 2010-03-09 Fei Company Sputtering coating of protective layer for charged particle beam processing

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5787056A (en) * 1980-09-24 1982-05-31 Varian Associates Method and device for strengthening neutralization of ion beam of positive charge
DE3136787A1 (en) * 1980-09-24 1982-08-26 Varian Associates, Inc., 94303 Palo Alto, Calif. "METHOD AND DEVICE FOR THE REINFORCED REALIZATION OF A POSITIVELY CHARGED ION RAY"
US4463255A (en) * 1980-09-24 1984-07-31 Varian Associates, Inc. Apparatus for enhanced neutralization of positively charged ion beam
JPS6212625B2 (en) * 1980-09-24 1987-03-19 Varian Associates
JPS5826441A (en) * 1981-08-10 1983-02-16 Nippon Telegr & Teleph Corp <Ntt> Ion implanting device
JPH0361303B2 (en) * 1981-08-10 1991-09-19 Nippon Telegraph & Telephone
US5136171A (en) * 1990-03-02 1992-08-04 Varian Associates, Inc. Charge neutralization apparatus for ion implantation system
US6610987B2 (en) * 2001-05-23 2003-08-26 Hitachi, Ltd. Apparatus and method of ion beam processing
JP2005015922A (en) * 2003-06-27 2005-01-20 Fei Co Proximity deposition method and system therefor
US6926935B2 (en) * 2003-06-27 2005-08-09 Fei Company Proximity deposition
US7675049B2 (en) 2006-02-15 2010-03-09 Fei Company Sputtering coating of protective layer for charged particle beam processing

Also Published As

Publication number Publication date
JPS569267B2 (en) 1981-02-28

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