JPS5411229B2 - - Google Patents
Info
- Publication number
- JPS5411229B2 JPS5411229B2 JP2055976A JP2055976A JPS5411229B2 JP S5411229 B2 JPS5411229 B2 JP S5411229B2 JP 2055976 A JP2055976 A JP 2055976A JP 2055976 A JP2055976 A JP 2055976A JP S5411229 B2 JPS5411229 B2 JP S5411229B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
- H01L21/2255—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/02—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the solid state
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Weting (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19752508362 DE2508362A1 (de) | 1975-02-26 | 1975-02-26 | Verfahren zum dotieren eines halbleiterkoerpers mit bor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS51110261A JPS51110261A (ja) | 1976-09-29 |
JPS5411229B2 true JPS5411229B2 (ko) | 1979-05-12 |
Family
ID=5939883
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2055976A Granted JPS51110261A (ja) | 1975-02-26 | 1976-02-26 | Handotaibanohosodedoopingusuruhoho |
Country Status (2)
Country | Link |
---|---|
JP (1) | JPS51110261A (ko) |
DE (1) | DE2508362A1 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5855350B2 (ja) * | 1980-12-05 | 1983-12-09 | マツダ株式会社 | 燃料噴射式エンジンの吸気装置 |
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1975
- 1975-02-26 DE DE19752508362 patent/DE2508362A1/de active Pending
-
1976
- 1976-02-26 JP JP2055976A patent/JPS51110261A/ja active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5855350B2 (ja) * | 1980-12-05 | 1983-12-09 | マツダ株式会社 | 燃料噴射式エンジンの吸気装置 |
Also Published As
Publication number | Publication date |
---|---|
JPS51110261A (ja) | 1976-09-29 |
DE2508362A1 (de) | 1976-09-02 |