JPS54107289A - Semiconductor light emitting element - Google Patents

Semiconductor light emitting element

Info

Publication number
JPS54107289A
JPS54107289A JP1426378A JP1426378A JPS54107289A JP S54107289 A JPS54107289 A JP S54107289A JP 1426378 A JP1426378 A JP 1426378A JP 1426378 A JP1426378 A JP 1426378A JP S54107289 A JPS54107289 A JP S54107289A
Authority
JP
Japan
Prior art keywords
layer
light emitting
metal film
emitting element
semiconductor light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1426378A
Other languages
Japanese (ja)
Inventor
Toshio Uji
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP1426378A priority Critical patent/JPS54107289A/en
Publication of JPS54107289A publication Critical patent/JPS54107289A/en
Pending legal-status Critical Current

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  • Led Devices (AREA)

Abstract

PURPOSE: To enable to output the light of at least two wave lengths from common emission outlet, from one semiconductor light emitting element.
CONSTITUTION: On the n type GaAs substrate 11, the n type GaAs layer 12, p type Al0.3Ga0.7As layer 13, and n type Al0.3Ga0.7As layer 14 are formed. After masking a part of the surface of the layer 14, a part of the layer 13 is exposed with etching. Next, the mask at the surface of the layer 14 is removed, and metal evaportion film is formed on the surface exposing the layers 13 and 14, and the metal film on the photo emitting outlet 20 is removed with etching by masking on a part of it. Further, the electrode metal film 17 to the layer 14 is made to the electrode metal film 16 by removing a part of the metal film on the layer 13. Further, when the voltage signals v1(t) and v2(t) are fed to the electrodes 15 and 17, light can be emitted from the light emitting sections 18 and 19.
COPYRIGHT: (C)1979,JPO&Japio
JP1426378A 1978-02-10 1978-02-10 Semiconductor light emitting element Pending JPS54107289A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1426378A JPS54107289A (en) 1978-02-10 1978-02-10 Semiconductor light emitting element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1426378A JPS54107289A (en) 1978-02-10 1978-02-10 Semiconductor light emitting element

Publications (1)

Publication Number Publication Date
JPS54107289A true JPS54107289A (en) 1979-08-22

Family

ID=11856197

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1426378A Pending JPS54107289A (en) 1978-02-10 1978-02-10 Semiconductor light emitting element

Country Status (1)

Country Link
JP (1) JPS54107289A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5113232A (en) * 1990-07-31 1992-05-12 Eastman Kodak Company LED array chips with thermal conductor
US5625201A (en) * 1994-12-12 1997-04-29 Motorola Multiwavelength LED devices and methods of fabrication

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5113232A (en) * 1990-07-31 1992-05-12 Eastman Kodak Company LED array chips with thermal conductor
US5625201A (en) * 1994-12-12 1997-04-29 Motorola Multiwavelength LED devices and methods of fabrication

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