JPS54107264A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS54107264A
JPS54107264A JP1355478A JP1355478A JPS54107264A JP S54107264 A JPS54107264 A JP S54107264A JP 1355478 A JP1355478 A JP 1355478A JP 1355478 A JP1355478 A JP 1355478A JP S54107264 A JPS54107264 A JP S54107264A
Authority
JP
Japan
Prior art keywords
pressure
electrode
contact
type
metallic film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1355478A
Other languages
Japanese (ja)
Inventor
Minoru Azuma
Isamu Tsuji
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP1355478A priority Critical patent/JPS54107264A/en
Publication of JPS54107264A publication Critical patent/JPS54107264A/en
Pending legal-status Critical Current

Links

Landscapes

  • Die Bonding (AREA)

Abstract

PURPOSE: To secure the operation dependent upon mechanical distortion such as heat and pressure, by bringing a conductive compression bonding plate, which contacts with the semiconductor or the electrode of a semiconductor element in a partial region, into contact with them through a flexible metallic film by pressure.
CONSTITUTION: P-type Si layers are formed on the surface and the reverse face of a n-type Si substrate, and one of them is used as a control electrode. Then, a n-type Si layer is formed on this layer, and taper part 31 and protrusion 32 are formed by etching. Further, the face of electrode support material 26b opposite to the face where flexible metallic film 27 is provided to contact with cathode 26a by pressure, and package electrode 28 is provided to contact with flexible metallic film 27 by pressure.
COPYRIGHT: (C)1979,JPO&Japio
JP1355478A 1978-02-10 1978-02-10 Semiconductor device Pending JPS54107264A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1355478A JPS54107264A (en) 1978-02-10 1978-02-10 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1355478A JPS54107264A (en) 1978-02-10 1978-02-10 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS54107264A true JPS54107264A (en) 1979-08-22

Family

ID=11836378

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1355478A Pending JPS54107264A (en) 1978-02-10 1978-02-10 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS54107264A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63244745A (en) * 1987-03-31 1988-10-12 Toshiba Corp Compression bonded semiconductor device
JPH0246742A (en) * 1988-08-09 1990-02-16 Toshiba Corp Compression-bonded flat semiconductor device
JPH0671278U (en) * 1993-03-19 1994-10-04 エムエイシイサンコー株式会社 Tray
JP2019504296A (en) * 2015-11-24 2019-02-14 フューチャー テクノロジー（センサーズ）リミテッドＦｕｔｕｒｅ Ｔｅｃｈｎｏｌｏｇｙ（Ｓｅｎｓｏｒｓ）Ｌｔｄ Sensor assembly

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4920539U (en) * 1972-05-24 1974-02-21

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4920539U (en) * 1972-05-24 1974-02-21

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63244745A (en) * 1987-03-31 1988-10-12 Toshiba Corp Compression bonded semiconductor device
JPH0246742A (en) * 1988-08-09 1990-02-16 Toshiba Corp Compression-bonded flat semiconductor device
JPH0671278U (en) * 1993-03-19 1994-10-04 エムエイシイサンコー株式会社 Tray
JP2019504296A (en) * 2015-11-24 2019-02-14 フューチャー テクノロジー（センサーズ）リミテッドＦｕｔｕｒｅ Ｔｅｃｈｎｏｌｏｇｙ（Ｓｅｎｓｏｒｓ）Ｌｔｄ Sensor assembly

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