JPS54103790A - Sputtering apparatus - Google Patents
Sputtering apparatusInfo
- Publication number
- JPS54103790A JPS54103790A JP1095078A JP1095078A JPS54103790A JP S54103790 A JPS54103790 A JP S54103790A JP 1095078 A JP1095078 A JP 1095078A JP 1095078 A JP1095078 A JP 1095078A JP S54103790 A JPS54103790 A JP S54103790A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- controller
- pressure
- enters
- active
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
Abstract
PURPOSE:A highly operatable, precisely controllable, labor saving sputtering apparatus is provided. Such apparatus is constructed by including an automatic innert gas flow rate controller and an automatic pressure controller to maintain a constant pressure by controlling gas flow rate. CONSTITUTION:An active gas 18 enters the flow detector 17 which converts a flow rate into an electric signal and puts out to the flow controller 19. An active-gas flow- rate 18 is automatically adjusted by the gas valve 16 controlled by the signal from the controller 19. The active gas then enters the gas mixer 11. Meanwhile, an innert gas 14 such as Ar passed the innert gas conduct valve 12 which is actuated by the signal from the pressure controller 15. The innert gas then enters the gas mixer 11. In the gas mixer 11, the active and inner gas are mixed and enters the vacuum container 5. The controller 15 takes the input signal from the pressure detector 20 that detects container pressure 5. The container pressure 5 is controlled by the automatic valve 12 so that an input signal deviation from the controller- stored value 15 is made to zero.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1095078A JPS54103790A (en) | 1978-02-01 | 1978-02-01 | Sputtering apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1095078A JPS54103790A (en) | 1978-02-01 | 1978-02-01 | Sputtering apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS54103790A true JPS54103790A (en) | 1979-08-15 |
Family
ID=11764470
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1095078A Pending JPS54103790A (en) | 1978-02-01 | 1978-02-01 | Sputtering apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS54103790A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55161067A (en) * | 1979-06-04 | 1980-12-15 | Hitachi Ltd | Manufacturing apparatus of thin film |
| JPS59185776A (en) * | 1983-04-04 | 1984-10-22 | ボ−グ・ワ−ナ−・コ−ポレ−シヨン | Iv b group metal quick reactive sputtering |
-
1978
- 1978-02-01 JP JP1095078A patent/JPS54103790A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55161067A (en) * | 1979-06-04 | 1980-12-15 | Hitachi Ltd | Manufacturing apparatus of thin film |
| JPS6312938B2 (en) * | 1979-06-04 | 1988-03-23 | Hitachi Ltd | |
| JPS59185776A (en) * | 1983-04-04 | 1984-10-22 | ボ−グ・ワ−ナ−・コ−ポレ−シヨン | Iv b group metal quick reactive sputtering |
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