JPS5390777A - Semiconductor device and its production - Google Patents

Semiconductor device and its production

Info

Publication number
JPS5390777A
JPS5390777A JP512177A JP512177A JPS5390777A JP S5390777 A JPS5390777 A JP S5390777A JP 512177 A JP512177 A JP 512177A JP 512177 A JP512177 A JP 512177A JP S5390777 A JPS5390777 A JP S5390777A
Authority
JP
Japan
Prior art keywords
production
semiconductor device
wiring layers
rest
melting point
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP512177A
Other languages
Japanese (ja)
Inventor
Iwao Higashinakagaha
Shohei Shima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP512177A priority Critical patent/JPS5390777A/en
Publication of JPS5390777A publication Critical patent/JPS5390777A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Conductive Materials (AREA)

Abstract

PURPOSE: To form wiring layers free from step cutting through vapor deposition by using an Al alloy composed of less than 50 wt.% of a high melting point metal and the rest of A for the wiring layers.
COPYRIGHT: (C)1978,JPO&Japio
JP512177A 1977-01-20 1977-01-20 Semiconductor device and its production Pending JPS5390777A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP512177A JPS5390777A (en) 1977-01-20 1977-01-20 Semiconductor device and its production

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP512177A JPS5390777A (en) 1977-01-20 1977-01-20 Semiconductor device and its production

Publications (1)

Publication Number Publication Date
JPS5390777A true JPS5390777A (en) 1978-08-09

Family

ID=11602474

Family Applications (1)

Application Number Title Priority Date Filing Date
JP512177A Pending JPS5390777A (en) 1977-01-20 1977-01-20 Semiconductor device and its production

Country Status (1)

Country Link
JP (1) JPS5390777A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5566609A (en) * 1978-11-13 1980-05-20 Acf Ind Inc Improved bypass valve
JPS58170059A (en) * 1982-03-31 1983-10-06 Fujitsu Ltd Semiconductor device
JPS63263744A (en) * 1987-04-22 1988-10-31 Nec Corp Aluminum alloy thin film wiring

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5566609A (en) * 1978-11-13 1980-05-20 Acf Ind Inc Improved bypass valve
JPS58170059A (en) * 1982-03-31 1983-10-06 Fujitsu Ltd Semiconductor device
JPS63263744A (en) * 1987-04-22 1988-10-31 Nec Corp Aluminum alloy thin film wiring

Similar Documents

Publication Publication Date Title
JPS5395571A (en) Semiconductor device
JPS5390777A (en) Semiconductor device and its production
JPS5247507A (en) Sintered alloy for cutting tools
JPS548972A (en) Forming method for fine electrode of semiconductor element
JPS52104066A (en) Selective etching method of thermosetting organic materials
JPS51150986A (en) Fabrication method of semiconductor device
JPS53110460A (en) Electrode of compound semiconductor
JPS53118607A (en) H2 gas power plant
JPS5397798A (en) Superconductive compound wire and production of the same
JPS5223281A (en) Method of manufacturing semiconductor device
JPS51118384A (en) Manufacturing prouss for mos type semiconductor unit
JPS51126762A (en) Integrated circuit manufacturing process
JPS5423374A (en) Manufacture of compound semiconductor device
JPS5416980A (en) Semiconductor device
JPS52129280A (en) Wire bonding method
JPS53110459A (en) Electrode forming method for iii-v group compounds semiconductor
JPS52103983A (en) Semiconductor integrated circuit
JPS51149217A (en) Process for preparing aldehydes
JPS53114671A (en) Manufacture for semiconductor device
JPS548971A (en) Manufacture of semiconductor device
JPS5396760A (en) Case for semiconductor device and production of the same
JPS53135266A (en) Production of semiconductor device
JPS5380163A (en) Manufacture of semiconductor device
JPS545655A (en) Manufacture of semiconductor device
JPS5298292A (en) Method of cutting metal