JPS5383907A - Floating zone refining method and apparatus - Google Patents
Floating zone refining method and apparatusInfo
- Publication number
- JPS5383907A JPS5383907A JP13720977A JP13720977A JPS5383907A JP S5383907 A JPS5383907 A JP S5383907A JP 13720977 A JP13720977 A JP 13720977A JP 13720977 A JP13720977 A JP 13720977A JP S5383907 A JPS5383907 A JP S5383907A
- Authority
- JP
- Japan
- Prior art keywords
- refining method
- floating zone
- zone refining
- floating
- zone
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/28—Controlling or regulating
- C30B13/285—Crystal holders, e.g. chucks
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/911—Seed or rod holders
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
- Y10T117/1084—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone having details of a stabilizing feature
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Recrystallisation Techniques (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE2652199A DE2652199C3 (de) | 1976-11-16 | 1976-11-16 | Vorrichtung zum Abstützen des Kristallstabes beim tiegelfreien Zonenziehen |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5383907A true JPS5383907A (en) | 1978-07-24 |
JPS5611672B2 JPS5611672B2 (ja) | 1981-03-16 |
Family
ID=5993299
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13720977A Granted JPS5383907A (en) | 1976-11-16 | 1977-11-15 | Floating zone refining method and apparatus |
Country Status (9)
Country | Link |
---|---|
US (1) | US4140571A (ja) |
JP (1) | JPS5383907A (ja) |
BE (1) | BE860862A (ja) |
DE (1) | DE2652199C3 (ja) |
DK (1) | DK152061C (ja) |
FR (1) | FR2370511A1 (ja) |
GB (1) | GB1567703A (ja) |
IT (1) | IT1091784B (ja) |
NL (1) | NL7710441A (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016052983A (ja) * | 2014-09-03 | 2016-04-14 | ジルトロニック アクチエンゲゼルシャフトSiltronic AG | 成長単結晶を支持する方法 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4257841A (en) * | 1978-01-06 | 1981-03-24 | Monsanto Company | Stabilizing and supporting apparatus for float zone refined semiconductor crystal rod |
US5092956A (en) * | 1987-09-30 | 1992-03-03 | The United States Of America As Represented By The United States National Aeronautics And Space Administration | Device for mechanically stabilizing web ribbon buttons during growth initiation |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3234009A (en) * | 1953-02-14 | 1966-02-08 | Siemens Ag | Method and device for the successive zone melting and resolidifying of extremely pure substances |
US3403007A (en) * | 1966-04-20 | 1968-09-24 | Materials Research Corp | Hollow cathode floating zone melter and process |
DE1519901A1 (de) * | 1966-09-23 | 1970-02-12 | Siemens Ag | Verfahren zum tiegelfreien Zonenschmelzen eines kristallinen Stabes |
BE789637A (fr) * | 1972-10-03 | 1973-04-03 | Elphiac Sa | Procede de fabrication de monocristaux et installation pour executer ceprocede. |
DE2358300C3 (de) * | 1973-11-22 | 1978-07-20 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Vorrichtung zum senkrechten Halten eines Halbleiterkristallstabes beim tiegelfreien Zonenschmelzen |
DE2455173C3 (de) * | 1974-11-21 | 1979-01-18 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Vorrichtung zum senkrechten Haltern des den Keimkristall enthaltenden Stabendes beim tiegelfreien Zonenschmelzen |
-
1976
- 1976-11-16 DE DE2652199A patent/DE2652199C3/de not_active Expired
-
1977
- 1977-09-23 NL NL7710441A patent/NL7710441A/xx not_active Application Discontinuation
- 1977-10-04 DK DK439977A patent/DK152061C/da not_active IP Right Cessation
- 1977-10-11 US US05/840,887 patent/US4140571A/en not_active Expired - Lifetime
- 1977-11-14 IT IT51798/77A patent/IT1091784B/it active
- 1977-11-15 JP JP13720977A patent/JPS5383907A/ja active Granted
- 1977-11-16 FR FR7734432A patent/FR2370511A1/fr active Granted
- 1977-11-16 GB GB47680/77A patent/GB1567703A/en not_active Expired
- 1977-11-16 BE BE182646A patent/BE860862A/xx unknown
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016052983A (ja) * | 2014-09-03 | 2016-04-14 | ジルトロニック アクチエンゲゼルシャフトSiltronic AG | 成長単結晶を支持する方法 |
Also Published As
Publication number | Publication date |
---|---|
DK152061C (da) | 1988-07-11 |
DK152061B (da) | 1988-01-25 |
US4140571A (en) | 1979-02-20 |
JPS5611672B2 (ja) | 1981-03-16 |
DE2652199A1 (de) | 1978-05-24 |
GB1567703A (en) | 1980-05-21 |
FR2370511A1 (fr) | 1978-06-09 |
DE2652199C3 (de) | 1982-05-19 |
DK439977A (da) | 1978-05-17 |
FR2370511B1 (ja) | 1980-02-15 |
DE2652199B2 (de) | 1980-08-14 |
NL7710441A (nl) | 1978-05-18 |
IT1091784B (it) | 1985-07-06 |
BE860862A (fr) | 1978-05-16 |
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