JPS5372483A - Semiconductor device and its manufacture - Google Patents

Semiconductor device and its manufacture

Info

Publication number
JPS5372483A
JPS5372483A JP14835976A JP14835976A JPS5372483A JP S5372483 A JPS5372483 A JP S5372483A JP 14835976 A JP14835976 A JP 14835976A JP 14835976 A JP14835976 A JP 14835976A JP S5372483 A JPS5372483 A JP S5372483A
Authority
JP
Japan
Prior art keywords
manufacture
semiconductor device
domain
ocupying
integrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14835976A
Other languages
Japanese (ja)
Other versions
JPS5755300B2 (en
Inventor
Takashi Osone
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP14835976A priority Critical patent/JPS5372483A/en
Publication of JPS5372483A publication Critical patent/JPS5372483A/en
Publication of JPS5755300B2 publication Critical patent/JPS5755300B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Weting (AREA)

Abstract

PURPOSE: To reduce the ocupying area and to integrate with high density, by obtaining the high resistance domain having a short length through the provision of the domain commonly used for the electrode drawing and the load resistor with the formation of the multicrystal semiconductor layer and the ion injection method.
COPYRIGHT: (C)1978,JPO&Japio
JP14835976A 1976-12-09 1976-12-09 Semiconductor device and its manufacture Granted JPS5372483A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14835976A JPS5372483A (en) 1976-12-09 1976-12-09 Semiconductor device and its manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14835976A JPS5372483A (en) 1976-12-09 1976-12-09 Semiconductor device and its manufacture

Publications (2)

Publication Number Publication Date
JPS5372483A true JPS5372483A (en) 1978-06-27
JPS5755300B2 JPS5755300B2 (en) 1982-11-24

Family

ID=15450983

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14835976A Granted JPS5372483A (en) 1976-12-09 1976-12-09 Semiconductor device and its manufacture

Country Status (1)

Country Link
JP (1) JPS5372483A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53109487A (en) * 1977-03-07 1978-09-25 Matsushita Electric Ind Co Ltd Manufacture for semiconductor device
JPS55127051A (en) * 1979-03-24 1980-10-01 Mitsubishi Electric Corp Manufacture of semiconductor device
JPS57210660A (en) * 1981-06-19 1982-12-24 Seiko Epson Corp Static ram
JPS63158863A (en) * 1987-11-06 1988-07-01 Seiko Epson Corp Static ram
JPH0513683A (en) * 1991-07-01 1993-01-22 Seiko Instr Inc Manufacture of semiconductor device
JP2011254060A (en) * 2010-06-04 2011-12-15 Sharp Corp Semiconductor device

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6098899A (en) * 1983-11-02 1985-06-01 Suzuki Motor Co Ltd Voltage regulator of ac generator
JPH0526959Y2 (en) * 1985-09-12 1993-07-08

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52117580A (en) * 1976-03-30 1977-10-03 Fujitsu Ltd Manufacture for mis type integrating circuit
JPS5324290A (en) * 1976-08-18 1978-03-06 Nec Corp Semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52117580A (en) * 1976-03-30 1977-10-03 Fujitsu Ltd Manufacture for mis type integrating circuit
JPS5324290A (en) * 1976-08-18 1978-03-06 Nec Corp Semiconductor device

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53109487A (en) * 1977-03-07 1978-09-25 Matsushita Electric Ind Co Ltd Manufacture for semiconductor device
JPS5755301B2 (en) * 1977-03-07 1982-11-24
JPS55127051A (en) * 1979-03-24 1980-10-01 Mitsubishi Electric Corp Manufacture of semiconductor device
JPS589587B2 (en) * 1979-03-24 1983-02-22 三菱電機株式会社 Manufacturing method of semiconductor device
JPS57210660A (en) * 1981-06-19 1982-12-24 Seiko Epson Corp Static ram
JPS63158863A (en) * 1987-11-06 1988-07-01 Seiko Epson Corp Static ram
JPH0516186B2 (en) * 1987-11-06 1993-03-03 Seiko Epson Corp
JPH0513683A (en) * 1991-07-01 1993-01-22 Seiko Instr Inc Manufacture of semiconductor device
JP2011254060A (en) * 2010-06-04 2011-12-15 Sharp Corp Semiconductor device

Also Published As

Publication number Publication date
JPS5755300B2 (en) 1982-11-24

Similar Documents

Publication Publication Date Title
JPS5372483A (en) Semiconductor device and its manufacture
JPS5394881A (en) Integrated circuit device
JPS52115663A (en) Semiconductor device
JPS52104060A (en) Resin mold type semiconductor device
JPS52129380A (en) Semiconductor device
JPS51142980A (en) Photo resistance layer formation method
JPS5374383A (en) Manufacture of compound semiconductor device
JPS52153383A (en) Preparation of semiconductor device
JPS546461A (en) Manufacture of semiconductor device
JPS5379461A (en) Semiconductor device and its manufacturing process
JPS539483A (en) Semiconductor device
JPS52156583A (en) Electrode formation method in semiconductor device
JPS5353965A (en) Semiconductor device and its production
JPS5341988A (en) Semiconductor unit and its production
JPS5213788A (en) Production method of semiconductor device
JPS5354968A (en) Semiconductor device
JPS52155986A (en) Semiconductor device
JPS53116069A (en) Measuring method for amount of ion injection
JPS5362150A (en) Arrester circuit
JPS51118965A (en) Insulation film of semiconductor device
JPS5360187A (en) High resistance integrated circuit element
JPS5383476A (en) Reverse conducting thyristor
JPS53147491A (en) Photo detecting semiconductor device
JPS5395580A (en) Semiconductor device
JPS5318991A (en) Magnetoresistive element