JPS5362484A - Thyristor - Google Patents

Thyristor

Info

Publication number
JPS5362484A
JPS5362484A JP13821776A JP13821776A JPS5362484A JP S5362484 A JPS5362484 A JP S5362484A JP 13821776 A JP13821776 A JP 13821776A JP 13821776 A JP13821776 A JP 13821776A JP S5362484 A JPS5362484 A JP S5362484A
Authority
JP
Japan
Prior art keywords
thyristor
shorten
lifetime
carriers
turn
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13821776A
Other languages
Japanese (ja)
Other versions
JPS5915185B2 (en
Inventor
Katsuhiro Oda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP13821776A priority Critical patent/JPS5915185B2/en
Publication of JPS5362484A publication Critical patent/JPS5362484A/en
Publication of JPS5915185B2 publication Critical patent/JPS5915185B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7428—Thyristor-type devices, e.g. having four-zone regenerative action having an amplifying gate structure, e.g. cascade (Darlington) configuration

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)

Abstract

PURPOSE:To shorten the lifetime of carriers in an auxiliary thyristor region and shorten the turn-off time in particular.
JP13821776A 1976-11-16 1976-11-16 thyristor Expired JPS5915185B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13821776A JPS5915185B2 (en) 1976-11-16 1976-11-16 thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13821776A JPS5915185B2 (en) 1976-11-16 1976-11-16 thyristor

Publications (2)

Publication Number Publication Date
JPS5362484A true JPS5362484A (en) 1978-06-03
JPS5915185B2 JPS5915185B2 (en) 1984-04-07

Family

ID=15216813

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13821776A Expired JPS5915185B2 (en) 1976-11-16 1976-11-16 thyristor

Country Status (1)

Country Link
JP (1) JPS5915185B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57178368A (en) * 1981-04-27 1982-11-02 Hitachi Ltd Semiconductor device for breaking current
JPS593969A (en) * 1982-06-29 1984-01-10 Meidensha Electric Mfg Co Ltd Amplification gate type gate turn off thyristor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57178368A (en) * 1981-04-27 1982-11-02 Hitachi Ltd Semiconductor device for breaking current
JPS6358377B2 (en) * 1981-04-27 1988-11-15 Hitachi Ltd
JPS593969A (en) * 1982-06-29 1984-01-10 Meidensha Electric Mfg Co Ltd Amplification gate type gate turn off thyristor

Also Published As

Publication number Publication date
JPS5915185B2 (en) 1984-04-07

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