JPS5347672B1 - - Google Patents
Info
- Publication number
- JPS5347672B1 JPS5347672B1 JP4580071A JP4580071A JPS5347672B1 JP S5347672 B1 JPS5347672 B1 JP S5347672B1 JP 4580071 A JP4580071 A JP 4580071A JP 4580071 A JP4580071 A JP 4580071A JP S5347672 B1 JPS5347672 B1 JP S5347672B1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/744—Gate-turn-off devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42304—Base electrodes for bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42308—Gate electrodes for thyristors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US5022870A | 1970-06-26 | 1970-06-26 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5347672B1 true JPS5347672B1 (ja) | 1978-12-22 |
Family
ID=21964071
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4580071A Pending JPS5347672B1 (ja) | 1970-06-26 | 1971-06-25 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US3609476A (ja) |
| JP (1) | JPS5347672B1 (ja) |
| CA (1) | CA926028A (ja) |
| DE (2) | DE7124567U (ja) |
| FR (1) | FR2096511B1 (ja) |
| GB (1) | GB1343794A (ja) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3906545A (en) * | 1972-01-24 | 1975-09-16 | Licentia Gmbh | Thyristor structure |
| US3940633A (en) * | 1974-07-01 | 1976-02-24 | General Electric Company | GTO turn-off circuit providing turn-off gate current pulse proportional to anode current |
| US4177479A (en) * | 1975-09-09 | 1979-12-04 | Bbc Brown Boveri & Company | Electrical circuit with a high-frequency thyristor fired by blocking leakage current |
| JPS5290273A (en) * | 1976-01-23 | 1977-07-29 | Hitachi Ltd | Semiconductor device |
| JPS53110386A (en) * | 1977-03-08 | 1978-09-27 | Toshiba Corp | Semiconductor device |
| US4092703A (en) * | 1977-03-15 | 1978-05-30 | Kabushiki Kaisha Meidensha | Gate controlled semiconductor device |
| US4126879A (en) * | 1977-09-14 | 1978-11-21 | Rca Corporation | Semiconductor device with ballast resistor adapted for a transcalent device |
| US4356503A (en) * | 1978-06-14 | 1982-10-26 | General Electric Company | Latching transistor |
| JPS55102267A (en) * | 1979-01-29 | 1980-08-05 | Meidensha Electric Mfg Co Ltd | Semiconductor control element |
| JPS56131955A (en) * | 1980-09-01 | 1981-10-15 | Hitachi Ltd | Semiconductor device |
| US4320571A (en) * | 1980-10-14 | 1982-03-23 | International Rectifier Corporation | Stencil mask process for high power, high speed controlled rectifiers |
| US4361717A (en) * | 1980-12-05 | 1982-11-30 | General Electric Company | Fluid cooled solar powered photovoltaic cell |
| US4529999A (en) * | 1982-07-09 | 1985-07-16 | Motorola, Inc. | Gate controlled switch |
| US4801554A (en) * | 1983-03-31 | 1989-01-31 | Bbc Brown, Boveri & Company, Limited | Process for manufacturing a power semiconductor component |
| DE3468787D1 (en) * | 1983-03-31 | 1988-02-18 | Bbc Brown Boveri & Cie | Semiconductor power device and method of manufacture |
| CN102800698B (zh) * | 2011-05-24 | 2015-06-03 | 杭州汉安半导体有限公司 | 分段宽变渐开线多指放大门极结构快速晶闸管 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1317754A (ja) * | 1961-03-17 | 1963-05-08 | ||
| US3356862A (en) * | 1964-12-02 | 1967-12-05 | Int Rectifier Corp | High speed controlled rectifier |
| DE1614506A1 (de) * | 1967-04-20 | 1970-03-05 | Siemens Ag | UEber die Steuerelektrode abschaltbarer Thyristor |
-
1970
- 1970-06-26 US US50228A patent/US3609476A/en not_active Expired - Lifetime
-
1971
- 1971-05-27 CA CA114021A patent/CA926028A/en not_active Expired
- 1971-06-25 FR FR7123183A patent/FR2096511B1/fr not_active Expired
- 1971-06-25 JP JP4580071A patent/JPS5347672B1/ja active Pending
- 1971-06-25 GB GB2992471A patent/GB1343794A/en not_active Expired
- 1971-06-25 DE DE19717124567U patent/DE7124567U/de not_active Expired
- 1971-06-25 DE DE2131747A patent/DE2131747C2/de not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| US3609476A (en) | 1971-09-28 |
| DE2131747C2 (de) | 1983-02-17 |
| FR2096511B1 (ja) | 1975-08-22 |
| CA926028A (en) | 1973-05-08 |
| DE2131747A1 (de) | 1971-12-30 |
| FR2096511A1 (ja) | 1972-02-18 |
| DE7124567U (de) | 1972-03-09 |
| GB1343794A (en) | 1974-01-16 |