JPS5338989A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5338989A JPS5338989A JP11350776A JP11350776A JPS5338989A JP S5338989 A JPS5338989 A JP S5338989A JP 11350776 A JP11350776 A JP 11350776A JP 11350776 A JP11350776 A JP 11350776A JP S5338989 A JPS5338989 A JP S5338989A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- malfunction
- surely
- adverse
- diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 230000007257 malfunction Effects 0.000 abstract 1
- 239000008188 pellet Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
- H01L29/7412—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a diode
- H01L29/7416—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a diode the device being an antiparallel diode, e.g. RCT
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Abstract
PURPOSE:To prevent the malfunction surely by forming SCR and diode in an adverse-parallel formation within the same pellet.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11350776A JPS5338989A (en) | 1976-09-21 | 1976-09-21 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11350776A JPS5338989A (en) | 1976-09-21 | 1976-09-21 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5338989A true JPS5338989A (en) | 1978-04-10 |
Family
ID=14614070
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11350776A Pending JPS5338989A (en) | 1976-09-21 | 1976-09-21 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5338989A (en) |
-
1976
- 1976-09-21 JP JP11350776A patent/JPS5338989A/en active Pending
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