JPS5336186A - Nnchannel fet transistor and method of producing same - Google Patents

Nnchannel fet transistor and method of producing same

Info

Publication number
JPS5336186A
JPS5336186A JP10832577A JP10832577A JPS5336186A JP S5336186 A JPS5336186 A JP S5336186A JP 10832577 A JP10832577 A JP 10832577A JP 10832577 A JP10832577 A JP 10832577A JP S5336186 A JPS5336186 A JP S5336186A
Authority
JP
Japan
Prior art keywords
nnchannel
producing same
fet transistor
fet
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10832577A
Other languages
Japanese (ja)
Inventor
Chihanii Iene
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of JPS5336186A publication Critical patent/JPS5336186A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26Bombardment with radiation
    • H01L21/263Bombardment with radiation with high-energy radiation
    • H01L21/265Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
    • H01L21/2652Through-implantation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/786Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78609Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device for preventing leakage current

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Toxicology (AREA)
  • Manufacturing & Machinery (AREA)
  • Health & Medical Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP10832577A 1976-09-14 1977-09-08 Nnchannel fet transistor and method of producing same Pending JPS5336186A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19762641302 DE2641302A1 (en) 1976-09-14 1976-09-14 N-CHANNEL MIS-FET IN ESFI TECHNOLOGY

Publications (1)

Publication Number Publication Date
JPS5336186A true JPS5336186A (en) 1978-04-04

Family

ID=5987864

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10832577A Pending JPS5336186A (en) 1976-09-14 1977-09-08 Nnchannel fet transistor and method of producing same

Country Status (7)

Country Link
JP (1) JPS5336186A (en)
BE (1) BE858694A (en)
DE (1) DE2641302A1 (en)
FR (1) FR2364542A1 (en)
GB (1) GB1543132A (en)
IT (1) IT1084222B (en)
NL (1) NL7710034A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55109439A (en) * 1979-02-16 1980-08-22 Nippon Kasei Kk Vapor-liquid contact apparatus

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4797721A (en) * 1987-04-13 1989-01-10 General Electric Company Radiation hardened semiconductor device and method of making the same
NL8701251A (en) * 1987-05-26 1988-12-16 Philips Nv SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE THEREOF
JP2782781B2 (en) * 1989-05-20 1998-08-06 富士通株式会社 Method for manufacturing semiconductor device
US5238857A (en) * 1989-05-20 1993-08-24 Fujitsu Limited Method of fabricating a metal-oxide-semiconductor device having a semiconductor on insulator (SOI) structure
GB2358079B (en) 2000-01-07 2004-02-18 Seiko Epson Corp Thin-film transistor
GB2358080B (en) * 2000-01-07 2004-06-02 Seiko Epson Corp Method of manufacturing a thin-film transistor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55109439A (en) * 1979-02-16 1980-08-22 Nippon Kasei Kk Vapor-liquid contact apparatus
JPS5820296B2 (en) * 1979-02-16 1983-04-22 日本化成株式会社 Gas-liquid contact device

Also Published As

Publication number Publication date
NL7710034A (en) 1978-03-16
GB1543132A (en) 1979-03-28
DE2641302A1 (en) 1978-03-16
BE858694A (en) 1978-01-02
IT1084222B (en) 1985-05-25
FR2364542A1 (en) 1978-04-07

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