JPS5336186A - Nnchannel fet transistor and method of producing same - Google Patents
Nnchannel fet transistor and method of producing sameInfo
- Publication number
- JPS5336186A JPS5336186A JP10832577A JP10832577A JPS5336186A JP S5336186 A JPS5336186 A JP S5336186A JP 10832577 A JP10832577 A JP 10832577A JP 10832577 A JP10832577 A JP 10832577A JP S5336186 A JPS5336186 A JP S5336186A
- Authority
- JP
- Japan
- Prior art keywords
- nnchannel
- producing same
- fet transistor
- fet
- transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
- H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
- H01L21/2652—Through-implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78609—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device for preventing leakage current
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- High Energy & Nuclear Physics (AREA)
- Toxicology (AREA)
- Manufacturing & Machinery (AREA)
- Health & Medical Sciences (AREA)
- Ceramic Engineering (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19762641302 DE2641302A1 (en) | 1976-09-14 | 1976-09-14 | N-CHANNEL MIS-FET IN ESFI TECHNOLOGY |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5336186A true JPS5336186A (en) | 1978-04-04 |
Family
ID=5987864
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10832577A Pending JPS5336186A (en) | 1976-09-14 | 1977-09-08 | Nnchannel fet transistor and method of producing same |
Country Status (7)
Country | Link |
---|---|
JP (1) | JPS5336186A (en) |
BE (1) | BE858694A (en) |
DE (1) | DE2641302A1 (en) |
FR (1) | FR2364542A1 (en) |
GB (1) | GB1543132A (en) |
IT (1) | IT1084222B (en) |
NL (1) | NL7710034A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55109439A (en) * | 1979-02-16 | 1980-08-22 | Nippon Kasei Kk | Vapor-liquid contact apparatus |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4797721A (en) * | 1987-04-13 | 1989-01-10 | General Electric Company | Radiation hardened semiconductor device and method of making the same |
NL8701251A (en) * | 1987-05-26 | 1988-12-16 | Philips Nv | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE THEREOF |
JP2782781B2 (en) * | 1989-05-20 | 1998-08-06 | 富士通株式会社 | Method for manufacturing semiconductor device |
US5238857A (en) * | 1989-05-20 | 1993-08-24 | Fujitsu Limited | Method of fabricating a metal-oxide-semiconductor device having a semiconductor on insulator (SOI) structure |
GB2358079B (en) | 2000-01-07 | 2004-02-18 | Seiko Epson Corp | Thin-film transistor |
GB2358080B (en) * | 2000-01-07 | 2004-06-02 | Seiko Epson Corp | Method of manufacturing a thin-film transistor |
-
1976
- 1976-09-14 DE DE19762641302 patent/DE2641302A1/en not_active Withdrawn
-
1977
- 1977-08-31 FR FR7726449A patent/FR2364542A1/en not_active Withdrawn
- 1977-09-07 IT IT27314/77A patent/IT1084222B/en active
- 1977-09-08 JP JP10832577A patent/JPS5336186A/en active Pending
- 1977-09-13 GB GB38062/77A patent/GB1543132A/en not_active Expired
- 1977-09-13 NL NL7710034A patent/NL7710034A/en not_active Application Discontinuation
- 1977-09-14 BE BE180905A patent/BE858694A/en unknown
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55109439A (en) * | 1979-02-16 | 1980-08-22 | Nippon Kasei Kk | Vapor-liquid contact apparatus |
JPS5820296B2 (en) * | 1979-02-16 | 1983-04-22 | 日本化成株式会社 | Gas-liquid contact device |
Also Published As
Publication number | Publication date |
---|---|
NL7710034A (en) | 1978-03-16 |
GB1543132A (en) | 1979-03-28 |
DE2641302A1 (en) | 1978-03-16 |
BE858694A (en) | 1978-01-02 |
IT1084222B (en) | 1985-05-25 |
FR2364542A1 (en) | 1978-04-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS52139389A (en) | Selffmatching fet transistor and method of producing same | |
JPS5346291A (en) | Method of producing ic structure including bipolar transistor and fet transistor | |
GB2010011B (en) | Selective chemical-sensitive fet transistor device and method for the manufacture of the same | |
JPS5286077A (en) | Supercompact device and method of manufacture thereof | |
JPS5347560A (en) | Functioned protein and method of producing same | |
JPS5396774A (en) | Short channel misfet transistor and method of producing same | |
JPS5372476A (en) | Method of producing insulated gate fet semiconductor | |
JPS53136488A (en) | Method of producing insulated gate fet transistor | |
JPS5345160A (en) | Method of controlling transistor | |
JPS52120498A (en) | Method of and device for fastening assembled body | |
JPS5364486A (en) | Semiconductor and method of producing same | |
JPS534602A (en) | Photoosensitive film for microophotogravure and method of producing same | |
JPS5617074A (en) | Field effect transistor and method of manufacturing same | |
JPS5377473A (en) | Transistor and method of producing same | |
JPS533780A (en) | Method of producing fet transistor | |
JPS52139386A (en) | Method of producing semiconductor device and semiconductor device | |
JPS53110481A (en) | Method of producing insulated gate fet ppchannel transistor | |
JPS5322380A (en) | Selffcentering gate fet transistor and method of producing same | |
JPS5453861A (en) | Semiconductor device and method of producing same | |
JPS52122087A (en) | Method of producing mosfet transistor | |
JPS5414177A (en) | Short channel length fet and method of producing same | |
JPS57164572A (en) | Field effect transistor device and method of producing same | |
JPS5414176A (en) | Short channel length fet and method of producing same | |
JPS5546596A (en) | Field effect transistor and method of fabricating same | |
JPS531477A (en) | Fet transistor and method of producing same |