JPS5329664A - Thermal diffustion of impurity into semiconductor substrate - Google Patents
Thermal diffustion of impurity into semiconductor substrateInfo
- Publication number
- JPS5329664A JPS5329664A JP10458976A JP10458976A JPS5329664A JP S5329664 A JPS5329664 A JP S5329664A JP 10458976 A JP10458976 A JP 10458976A JP 10458976 A JP10458976 A JP 10458976A JP S5329664 A JPS5329664 A JP S5329664A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor substrate
- impurity
- diffustion
- thermal
- blowing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10458976A JPS5329664A (en) | 1976-08-31 | 1976-08-31 | Thermal diffustion of impurity into semiconductor substrate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10458976A JPS5329664A (en) | 1976-08-31 | 1976-08-31 | Thermal diffustion of impurity into semiconductor substrate |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5329664A true JPS5329664A (en) | 1978-03-20 |
Family
ID=14384611
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10458976A Pending JPS5329664A (en) | 1976-08-31 | 1976-08-31 | Thermal diffustion of impurity into semiconductor substrate |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5329664A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5416367U (en) * | 1977-07-06 | 1979-02-02 |
-
1976
- 1976-08-31 JP JP10458976A patent/JPS5329664A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5416367U (en) * | 1977-07-06 | 1979-02-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5329664A (en) | Thermal diffustion of impurity into semiconductor substrate | |
JPS5226023A (en) | Combustion process with minimized excess air | |
JPS5245517A (en) | Production process of tungsten | |
JPS5423472A (en) | Manufacture for semiconductor device | |
JPS52155969A (en) | Reduced pressure heat treatment furnace of semiconductor wafers | |
JPS5245515A (en) | Production process of tungsten | |
JPS5226013A (en) | Compound tube | |
JPS5379389A (en) | Heat treatment apparatus for mos | |
JPS5245516A (en) | Prduction process of tungsten | |
JPS51131458A (en) | A process for treatment of high temperature high pressure exhaust gas | |
JPS525321A (en) | Process for manufacturing silicon carbide fibers | |
JPS5267573A (en) | Manufacturing device for semiconductor | |
JPS535967A (en) | Method and device for forming thin film by vapor-phase reaction | |
JPS5264271A (en) | Semiconductor producing device | |
JPS5250686A (en) | Production of semiconductor device | |
JPS5267572A (en) | Manufacturing device for semiconductor | |
JPS51112292A (en) | Semiconductor device | |
JPS5247123A (en) | Thermal reactor of engine for automobile | |
JPS5327285A (en) | Method of manufacturing bulb | |
JPS5261861A (en) | Manufacturing method of heat pipe | |
JPS5330271A (en) | Production of semiconductor device | |
JPS5259311A (en) | Hydrogen exhaust pump | |
JPS5230930A (en) | Manufacturing process for heater | |
JPS526154A (en) | Manufacturing method of heat exchanger multitubular pipe | |
JPS51118374A (en) | Manufacturing process for oxidized silicon film |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
FPAY | Renewal fee payment (prs date is renewal date of database) |
Year of fee payment: 10 Free format text: PAYMENT UNTIL: 20090423 |
|
FPAY | Renewal fee payment (prs date is renewal date of database) |
Year of fee payment: 10 Free format text: PAYMENT UNTIL: 20090423 |
|
FPAY | Renewal fee payment (prs date is renewal date of database) |
Year of fee payment: 11 Free format text: PAYMENT UNTIL: 20100423 |
|
EXPY | Cancellation because of completion of term | ||
FPAY | Renewal fee payment (prs date is renewal date of database) |
Year of fee payment: 11 Free format text: PAYMENT UNTIL: 20100423 |