JPS532089A - Semiconductor switching unit - Google Patents
Semiconductor switching unitInfo
- Publication number
- JPS532089A JPS532089A JP7621476A JP7621476A JPS532089A JP S532089 A JPS532089 A JP S532089A JP 7621476 A JP7621476 A JP 7621476A JP 7621476 A JP7621476 A JP 7621476A JP S532089 A JPS532089 A JP S532089A
- Authority
- JP
- Japan
- Prior art keywords
- switching unit
- semiconductor switching
- turn
- hfe
- max
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Thyristor Switches And Gates (AREA)
- Bipolar Transistors (AREA)
- Thyristors (AREA)
Abstract
PURPOSE: To prevent effectively the mistaken reignition at the turn-off time for a composite-type semiconductor device of the gate turn-off thyrstor and transistor, by satisfying hFE≤βmax between hFE of the transistor and maximum turn-off gain βmax of the tyristor.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7621476A JPS532089A (en) | 1976-06-28 | 1976-06-28 | Semiconductor switching unit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7621476A JPS532089A (en) | 1976-06-28 | 1976-06-28 | Semiconductor switching unit |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS532089A true JPS532089A (en) | 1978-01-10 |
JPS5728957B2 JPS5728957B2 (en) | 1982-06-19 |
Family
ID=13598913
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7621476A Granted JPS532089A (en) | 1976-06-28 | 1976-06-28 | Semiconductor switching unit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS532089A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4604638A (en) * | 1983-05-17 | 1986-08-05 | Kabushiki Kaisha Toshiba | Five layer semiconductor device with separate insulated turn-on and turn-off gates |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6016061U (en) * | 1983-07-11 | 1985-02-02 | 住友金属工業株式会社 | Seal-cum-shutoff valve |
-
1976
- 1976-06-28 JP JP7621476A patent/JPS532089A/en active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4604638A (en) * | 1983-05-17 | 1986-08-05 | Kabushiki Kaisha Toshiba | Five layer semiconductor device with separate insulated turn-on and turn-off gates |
Also Published As
Publication number | Publication date |
---|---|
JPS5728957B2 (en) | 1982-06-19 |
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