JPS5320768A - Forming method of fine pattern mask layer - Google Patents

Forming method of fine pattern mask layer

Info

Publication number
JPS5320768A
JPS5320768A JP9450976A JP9450976A JPS5320768A JP S5320768 A JPS5320768 A JP S5320768A JP 9450976 A JP9450976 A JP 9450976A JP 9450976 A JP9450976 A JP 9450976A JP S5320768 A JPS5320768 A JP S5320768A
Authority
JP
Japan
Prior art keywords
forming method
mask layer
fine pattern
pattern mask
patterns
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9450976A
Other languages
Japanese (ja)
Inventor
Masahiro Iiri
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP9450976A priority Critical patent/JPS5320768A/en
Publication of JPS5320768A publication Critical patent/JPS5320768A/en
Pending legal-status Critical Current

Links

Landscapes

  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

PURPOSE: To facilitate controlling of pattern accuracy and make the final accuracy more than 10 times higher than that of conventional oxide film patterns by selectively oxidizing polycrystalline Si film, utilizing said oxidized part as patterns for mask.
COPYRIGHT: (C)1978,JPO&Japio
JP9450976A 1976-08-10 1976-08-10 Forming method of fine pattern mask layer Pending JPS5320768A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9450976A JPS5320768A (en) 1976-08-10 1976-08-10 Forming method of fine pattern mask layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9450976A JPS5320768A (en) 1976-08-10 1976-08-10 Forming method of fine pattern mask layer

Publications (1)

Publication Number Publication Date
JPS5320768A true JPS5320768A (en) 1978-02-25

Family

ID=14112277

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9450976A Pending JPS5320768A (en) 1976-08-10 1976-08-10 Forming method of fine pattern mask layer

Country Status (1)

Country Link
JP (1) JPS5320768A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012018342A (en) * 2010-07-09 2012-01-26 Shin Etsu Chem Co Ltd Transfer method of resist pattern and manufacturing method of photo mask

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012018342A (en) * 2010-07-09 2012-01-26 Shin Etsu Chem Co Ltd Transfer method of resist pattern and manufacturing method of photo mask

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