JPS53142882A - Charge transfer unit - Google Patents
Charge transfer unitInfo
- Publication number
- JPS53142882A JPS53142882A JP5709377A JP5709377A JPS53142882A JP S53142882 A JPS53142882 A JP S53142882A JP 5709377 A JP5709377 A JP 5709377A JP 5709377 A JP5709377 A JP 5709377A JP S53142882 A JPS53142882 A JP S53142882A
- Authority
- JP
- Japan
- Prior art keywords
- transfer unit
- charge transfer
- mosfet
- absorbing
- separation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000001681 protective effect Effects 0.000 abstract 1
- 238000000926 separation method Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/762—Charge transfer devices
- H01L29/765—Charge-coupled devices
- H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
- H01L29/76816—Output structures
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
PURPOSE:To perfectly perform the separation from other parts, by absorbing the carrier leaked to the substrate with protective ring, in operating a MOSFET with the application of a high drain voltage.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5709377A JPS53142882A (en) | 1977-05-19 | 1977-05-19 | Charge transfer unit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5709377A JPS53142882A (en) | 1977-05-19 | 1977-05-19 | Charge transfer unit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS53142882A true JPS53142882A (en) | 1978-12-12 |
Family
ID=13045879
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5709377A Pending JPS53142882A (en) | 1977-05-19 | 1977-05-19 | Charge transfer unit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS53142882A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5815270A (en) * | 1981-07-21 | 1983-01-28 | Nec Corp | Charge transfer device |
EP0536688A2 (en) * | 1991-10-08 | 1993-04-14 | Sony Corporation | MOS transistor and charge detector using same |
-
1977
- 1977-05-19 JP JP5709377A patent/JPS53142882A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5815270A (en) * | 1981-07-21 | 1983-01-28 | Nec Corp | Charge transfer device |
JPH0421339B2 (en) * | 1981-07-21 | 1992-04-09 | Nippon Electric Co | |
EP0536688A2 (en) * | 1991-10-08 | 1993-04-14 | Sony Corporation | MOS transistor and charge detector using same |
EP0536688A3 (en) * | 1991-10-08 | 1994-04-20 | Sony Corp |
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