JPS53134363A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS53134363A
JPS53134363A JP4958877A JP4958877A JPS53134363A JP S53134363 A JPS53134363 A JP S53134363A JP 4958877 A JP4958877 A JP 4958877A JP 4958877 A JP4958877 A JP 4958877A JP S53134363 A JPS53134363 A JP S53134363A
Authority
JP
Japan
Prior art keywords
semiconductor device
reproducibility
electrode
improvement
taking
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4958877A
Other languages
Japanese (ja)
Inventor
Kiyobumi Oota
Yutaka Hirano
Masanobu Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP4958877A priority Critical patent/JPS53134363A/en
Publication of JPS53134363A publication Critical patent/JPS53134363A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE: To enable greater output and to make easy the improvement of high frequency performance, by increasing the reproducibility of fine patterns, through taking each electrode of a semiconductor device at the same plane.
COPYRIGHT: (C)1978,JPO&Japio
JP4958877A 1977-04-28 1977-04-28 Semiconductor device Pending JPS53134363A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4958877A JPS53134363A (en) 1977-04-28 1977-04-28 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4958877A JPS53134363A (en) 1977-04-28 1977-04-28 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS53134363A true JPS53134363A (en) 1978-11-22

Family

ID=12835375

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4958877A Pending JPS53134363A (en) 1977-04-28 1977-04-28 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS53134363A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05175239A (en) * 1991-06-14 1993-07-13 Cree Res Inc High power and high frequency metal-semiconductor field-effect transistor

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4838112A (en) * 1971-09-10 1973-06-05
JPS5164882A (en) * 1974-12-03 1976-06-04 Nippon Electric Co HANDOTAISHUSEKIKAIROYOTA SOHAISENKIBAN

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4838112A (en) * 1971-09-10 1973-06-05
JPS5164882A (en) * 1974-12-03 1976-06-04 Nippon Electric Co HANDOTAISHUSEKIKAIROYOTA SOHAISENKIBAN

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05175239A (en) * 1991-06-14 1993-07-13 Cree Res Inc High power and high frequency metal-semiconductor field-effect transistor

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