JPS53118991A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS53118991A
JPS53118991A JP3387177A JP3387177A JPS53118991A JP S53118991 A JPS53118991 A JP S53118991A JP 3387177 A JP3387177 A JP 3387177A JP 3387177 A JP3387177 A JP 3387177A JP S53118991 A JPS53118991 A JP S53118991A
Authority
JP
Japan
Prior art keywords
semiconductor device
recrystalizing
activating
injected
low temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3387177A
Other languages
Japanese (ja)
Inventor
Teruo Sakurai
Hidetoshi Nishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP3387177A priority Critical patent/JPS53118991A/en
Publication of JPS53118991A publication Critical patent/JPS53118991A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/8605—Resistors with PN junctions

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To obtain the resistor controlling the resistance value strictly, by processing Si made to non-crystal condition with As ion injection at comparatively low temperature, recrystalizing only a part, and activating the injected As.
JP3387177A 1977-03-26 1977-03-26 Semiconductor device Pending JPS53118991A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3387177A JPS53118991A (en) 1977-03-26 1977-03-26 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3387177A JPS53118991A (en) 1977-03-26 1977-03-26 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS53118991A true JPS53118991A (en) 1978-10-17

Family

ID=12398567

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3387177A Pending JPS53118991A (en) 1977-03-26 1977-03-26 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS53118991A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56146265A (en) * 1980-01-22 1981-11-13 Chiyou Lsi Gijutsu Kenkyu Kumiai Semiconductor device
JP2011198988A (en) * 2010-03-19 2011-10-06 Fujitsu Semiconductor Ltd Method of manufacturing semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56146265A (en) * 1980-01-22 1981-11-13 Chiyou Lsi Gijutsu Kenkyu Kumiai Semiconductor device
JP2011198988A (en) * 2010-03-19 2011-10-06 Fujitsu Semiconductor Ltd Method of manufacturing semiconductor device

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