JPS53118991A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS53118991A JPS53118991A JP3387177A JP3387177A JPS53118991A JP S53118991 A JPS53118991 A JP S53118991A JP 3387177 A JP3387177 A JP 3387177A JP 3387177 A JP3387177 A JP 3387177A JP S53118991 A JPS53118991 A JP S53118991A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- recrystalizing
- activating
- injected
- low temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 230000003213 activating effect Effects 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 238000002347 injection Methods 0.000 abstract 1
- 239000007924 injection Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/8605—Resistors with PN junctions
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To obtain the resistor controlling the resistance value strictly, by processing Si made to non-crystal condition with As ion injection at comparatively low temperature, recrystalizing only a part, and activating the injected As.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3387177A JPS53118991A (en) | 1977-03-26 | 1977-03-26 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3387177A JPS53118991A (en) | 1977-03-26 | 1977-03-26 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS53118991A true JPS53118991A (en) | 1978-10-17 |
Family
ID=12398567
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3387177A Pending JPS53118991A (en) | 1977-03-26 | 1977-03-26 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS53118991A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56146265A (en) * | 1980-01-22 | 1981-11-13 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Semiconductor device |
JP2011198988A (en) * | 2010-03-19 | 2011-10-06 | Fujitsu Semiconductor Ltd | Method of manufacturing semiconductor device |
-
1977
- 1977-03-26 JP JP3387177A patent/JPS53118991A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56146265A (en) * | 1980-01-22 | 1981-11-13 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Semiconductor device |
JP2011198988A (en) * | 2010-03-19 | 2011-10-06 | Fujitsu Semiconductor Ltd | Method of manufacturing semiconductor device |
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