JPS5310231A - Digital differential amplifier for charge coupled device and method of driving same - Google Patents

Digital differential amplifier for charge coupled device and method of driving same

Info

Publication number
JPS5310231A
JPS5310231A JP8400777A JP8400777A JPS5310231A JP S5310231 A JPS5310231 A JP S5310231A JP 8400777 A JP8400777 A JP 8400777A JP 8400777 A JP8400777 A JP 8400777A JP S5310231 A JPS5310231 A JP S5310231A
Authority
JP
Japan
Prior art keywords
differential amplifier
coupled device
charge coupled
digital differential
driving same
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8400777A
Other languages
Japanese (ja)
Inventor
Hofuman Kuruto
Maute Manfureeto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of JPS5310231A publication Critical patent/JPS5310231A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K5/00Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/01Shaping pulses
    • H03K5/02Shaping pulses by amplifying
    • H03K5/023Shaping pulses by amplifying using field effect transistors
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/24Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using capacitors
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C19/00Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C19/00Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/282Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
    • G11C19/285Peripheral circuits, e.g. for writing into the first stage; for reading-out of the last stage
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/762Charge transfer devices
    • H01L29/765Charge-coupled devices
    • H01L29/768Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76825Structures for regeneration, refreshing, leakage compensation or the like

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Nonlinear Science (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Amplifiers (AREA)
JP8400777A 1974-01-25 1977-07-13 Digital differential amplifier for charge coupled device and method of driving same Pending JPS5310231A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR7402630A FR2258783B1 (en) 1974-01-25 1974-01-25
DE19762631471 DE2631471A1 (en) 1974-01-25 1976-07-13 DIGITAL DIFFERENCE AMPLIFIER FOR CCD ARRANGEMENTS

Publications (1)

Publication Number Publication Date
JPS5310231A true JPS5310231A (en) 1978-01-30

Family

ID=25770691

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8400777A Pending JPS5310231A (en) 1974-01-25 1977-07-13 Digital differential amplifier for charge coupled device and method of driving same

Country Status (7)

Country Link
US (1) US4134033A (en)
JP (1) JPS5310231A (en)
BE (1) BE856780R (en)
DE (1) DE2631471A1 (en)
FR (2) FR2258783B1 (en)
GB (1) GB1587832A (en)
NL (1) NL7707757A (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2405006A1 (en) * 1977-10-10 1979-05-04 Fontan Andre HARVESTING MACHINE
DE2751881A1 (en) * 1977-11-21 1979-05-23 Siemens Ag MONOLITHIC DIGITAL SEMI-CONDUCTOR CIRCUIT WITH SEVERAL BIPOLAR TRANSISTORS
FR2553606B1 (en) * 1983-10-17 1989-10-13 Labo Cent Telecommunicat DEVICE FOR IMPROVING THE HIGH FREQUENCY OPERATION OF LOGIC INTEGRATED CIRCUITS, ESPECIALLY OF THE ECL FAMILY
US4668881A (en) * 1983-12-01 1987-05-26 Rca Corporation Sense circuit with presetting means
US5548238A (en) * 1993-10-01 1996-08-20 Cirrus Logic Inc. Low power high speed CMOS current switching circuit
AUPQ851200A0 (en) * 2000-07-03 2000-07-27 Degenhardt, Scott Lance Grape harvesting collection system

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU461729B2 (en) * 1971-01-14 1975-06-05 Rca Corporation Charge coupled circuits
US3765002A (en) * 1971-04-20 1973-10-09 Siemens Ag Accelerated bit-line discharge of a mosfet memory
US3810124A (en) * 1972-06-30 1974-05-07 Ibm Memory accessing system
US3801831A (en) * 1972-10-13 1974-04-02 Motorola Inc Voltage level shifting circuit
US3916430A (en) * 1973-03-14 1975-10-28 Rca Corp System for eliminating substrate bias effect in field effect transistor circuits
US3876989A (en) * 1973-06-18 1975-04-08 Ibm Ccd optical sensor storage device having continuous light exposure compensation
US3895360A (en) * 1974-01-29 1975-07-15 Westinghouse Electric Corp Block oriented random access memory
GB1460194A (en) * 1974-05-17 1976-12-31 Rca Corp Circuits exhibiting hysteresis
US3891977A (en) * 1974-07-15 1975-06-24 Fairchild Camera Instr Co Charge coupled memory device
US4060737A (en) * 1974-08-22 1977-11-29 Texas Instruments Incorporated Charge coupled device shift registers having an improved regenerative charge detector
US3959781A (en) * 1974-11-04 1976-05-25 Intel Corporation Semiconductor random access memory
US3946368A (en) * 1974-12-27 1976-03-23 Intel Corporation System for compensating voltage for a CCD sensing circuit
US4007381A (en) * 1975-04-18 1977-02-08 Bell Telephone Laboratories, Incorporated Balanced regenerative charge detection circuit for semiconductor charge transfer devices
DE2541721A1 (en) * 1975-09-18 1977-03-24 Siemens Ag DIGITAL DIFFERENCE AMPLIFIER FOR CCD ARRANGEMENTS
DE2541686A1 (en) * 1975-09-18 1977-03-24 Siemens Ag REGENERATION CIRCUIT FOR CHARGE-COUPLED ELEMENTS
DE2602520B2 (en) * 1976-01-23 1978-02-02 LINEAR OUTPUT AMPLIFIER FOR CHARGE-COUPLED ELEMENTS

Also Published As

Publication number Publication date
US4134033A (en) 1979-01-09
BE856780R (en) 1977-10-31
FR2358783A2 (en) 1978-02-10
FR2258783B1 (en) 1977-09-16
DE2631471A1 (en) 1978-01-19
GB1587832A (en) 1981-04-08
NL7707757A (en) 1978-01-17
FR2358783B2 (en) 1982-11-12
FR2258783A1 (en) 1975-08-22

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