JPS5271992A - Programmable monolithic circuit system - Google Patents

Programmable monolithic circuit system

Info

Publication number
JPS5271992A
JPS5271992A JP14795475A JP14795475A JPS5271992A JP S5271992 A JPS5271992 A JP S5271992A JP 14795475 A JP14795475 A JP 14795475A JP 14795475 A JP14795475 A JP 14795475A JP S5271992 A JPS5271992 A JP S5271992A
Authority
JP
Japan
Prior art keywords
circuit system
monolithic circuit
programmable monolithic
programmable
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14795475A
Other languages
Japanese (ja)
Other versions
JPS5834941B2 (en
Inventor
Masanori Murata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP50147954A priority Critical patent/JPS5834941B2/en
Publication of JPS5271992A publication Critical patent/JPS5271992A/en
Publication of JPS5834941B2 publication Critical patent/JPS5834941B2/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B69/00Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

Landscapes

  • Bipolar Transistors (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)

Abstract

PURPOSE:To make possible low power voltage operation by enabling transistor operation be made by remaining emitter when one of the emitter junction of the base region of a transistor is broken by writing.
JP50147954A 1975-12-11 1975-12-11 Programmable monolithic integrated circuit Expired JPS5834941B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50147954A JPS5834941B2 (en) 1975-12-11 1975-12-11 Programmable monolithic integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50147954A JPS5834941B2 (en) 1975-12-11 1975-12-11 Programmable monolithic integrated circuit

Publications (2)

Publication Number Publication Date
JPS5271992A true JPS5271992A (en) 1977-06-15
JPS5834941B2 JPS5834941B2 (en) 1983-07-29

Family

ID=15441826

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50147954A Expired JPS5834941B2 (en) 1975-12-11 1975-12-11 Programmable monolithic integrated circuit

Country Status (1)

Country Link
JP (1) JPS5834941B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5591164A (en) * 1978-12-28 1980-07-10 Fujitsu Ltd Junction collapsible type programmable rom
JPS58161363A (en) * 1982-01-04 1983-09-24 フエアチアイルド・カメラ・アンド・インストルメント・コ−ポレ−シヨン Lateral p-n-p cell ram and standard ram and prom oxide isolating process

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5591164A (en) * 1978-12-28 1980-07-10 Fujitsu Ltd Junction collapsible type programmable rom
JPS639382B2 (en) * 1978-12-28 1988-02-29 Fujitsu Ltd
JPS58161363A (en) * 1982-01-04 1983-09-24 フエアチアイルド・カメラ・アンド・インストルメント・コ−ポレ−シヨン Lateral p-n-p cell ram and standard ram and prom oxide isolating process

Also Published As

Publication number Publication date
JPS5834941B2 (en) 1983-07-29

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