JPS5260568A - Production of schottky diode - Google Patents
Production of schottky diodeInfo
- Publication number
- JPS5260568A JPS5260568A JP13618375A JP13618375A JPS5260568A JP S5260568 A JPS5260568 A JP S5260568A JP 13618375 A JP13618375 A JP 13618375A JP 13618375 A JP13618375 A JP 13618375A JP S5260568 A JPS5260568 A JP S5260568A
- Authority
- JP
- Japan
- Prior art keywords
- schottky diode
- production
- palnar
- sputter
- produce
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE: To produce a good palnar GaAs Schottky diode by using sputter.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13618375A JPS5260568A (en) | 1975-11-14 | 1975-11-14 | Production of schottky diode |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13618375A JPS5260568A (en) | 1975-11-14 | 1975-11-14 | Production of schottky diode |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5260568A true JPS5260568A (en) | 1977-05-19 |
Family
ID=15169274
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13618375A Pending JPS5260568A (en) | 1975-11-14 | 1975-11-14 | Production of schottky diode |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5260568A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4951121A (en) * | 1984-11-14 | 1990-08-21 | Kabushiki Kaisha Toshiba | Semiconductor device with a 3-ply gate electrode |
-
1975
- 1975-11-14 JP JP13618375A patent/JPS5260568A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4951121A (en) * | 1984-11-14 | 1990-08-21 | Kabushiki Kaisha Toshiba | Semiconductor device with a 3-ply gate electrode |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5228281A (en) | Light emitting semiconductor device | |
JPS5271456A (en) | Synthesis of 1alpha-hydroxysteroid derivatives | |
JPS5260568A (en) | Production of schottky diode | |
JPS524175A (en) | Groups iii-v compounds semiconductor device | |
JPS5410682A (en) | Production of semiconductor elements | |
JPS5267271A (en) | Formation of through-hole onto semiconductor substrate | |
JPS51142957A (en) | Magnetron | |
JPS51139775A (en) | Method of forming projection electrode | |
JPS5359034A (en) | Cardiotomics comtg. dopamine derivs | |
JPS524187A (en) | P-n conjunction type solid element | |
JPS5239882A (en) | Method of making a bracket for a plowing pawl | |
JPS5222081A (en) | Preparation of stabilised polyolefin | |
JPS53133377A (en) | Manufacture of schottky diode | |
JPS53132260A (en) | Production of semiconductor device | |
JPS5221300A (en) | Production method of cubic boron nitride | |
JPS51122087A (en) | A method for preparing 7-acylamino-3- formyl-2-cephem-4-carboxylic aci d derivatives | |
JPS5294484A (en) | Production of glucose isomerase | |
JPS5282459A (en) | Wristwatch | |
JPS537619A (en) | Novel preparation of alpha-mercaptoamino acid derivatives | |
JPS53123075A (en) | Group iii-v compound semiconductor device | |
JPS51111083A (en) | An anode structure of a point contact diode | |
JPS51123559A (en) | Production method of aerial phase growth wafer | |
JPS5246846A (en) | Clockface | |
JPS51135627A (en) | Magnetic head | |
JPS53110562A (en) | Alarm watch |