JPS5254384A - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number: JPS5254384A
Authority: JP; Japan
Prior art keywords: memory device; semiconductor memory; exclusive; read; icreasing
Prior art date: 1975-10-30
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Granted

Application number

JP50129856A

Other languages

English (en)

Other versions

JPS5549779B2 (ja

Inventor

Shigeharu Horiuchi

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Toshiba Corp

Original Assignee

Toshiba Corp

Tokyo Shibaura Electric Co Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1975-10-30

Filing date

1975-10-30

Publication date

1977-05-02

1975-10-30 Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp

1975-10-30 Priority to JP50129856A priority Critical patent/JPS5254384A/ja

1977-05-02 Publication of JPS5254384A publication Critical patent/JPS5254384A/ja

1980-12-13 Publication of JPS5549779B2 publication Critical patent/JPS5549779B2/ja

Status Granted legal-status Critical Current

Links

239000004065 semiconductor Substances 0.000 title 1
230000003321 amplification Effects 0.000 abstract 1
238000003199 nucleic acid amplification method Methods 0.000 abstract 1
230000035945 sensitivity Effects 0.000 abstract 1

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
- H01L27/0711—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors
- H01L27/0716—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors in combination with vertical bipolar transistors and diodes, or capacitors, or resistors

Landscapes

Engineering & Computer Science (AREA)
Power Engineering (AREA)
Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Computer Hardware Design (AREA)
Microelectronics & Electronic Packaging (AREA)
Semiconductor Memories (AREA)

JP50129856A 1975-10-30 1975-10-30 Semiconductor memory device Granted JPS5254384A (en)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
JP50129856A JPS5254384A (en)	1975-10-30	1975-10-30	Semiconductor memory device

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP50129856A JPS5254384A (en)	1975-10-30	1975-10-30	Semiconductor memory device

Publications (2)

Publication Number	Publication Date
JPS5254384A true JPS5254384A (en)	1977-05-02
JPS5549779B2 JPS5549779B2 (ja)	1980-12-13

Family

ID=15019944

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP50129856A Granted JPS5254384A (en)	1975-10-30	1975-10-30	Semiconductor memory device

Country Status (1)

Country	Link
JP (1)	JPS5254384A (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS61111414U (ja) *	1984-12-27	1986-07-15

1975
- 1975-10-30 JP JP50129856A patent/JPS5254384A/ja active Granted

Also Published As

Publication number	Publication date
JPS5549779B2 (ja)	1980-12-13

Publication	Publication Date	Title
NL7500550A (nl)	1976-07-20	Halfgeleider-geheugeninrichting.
NL7614537A (nl)	1977-07-01	Halfgeleidergeheugeninrichting.
NL187461C (nl)	1991-10-01	Halfgeleiderinrichting.
NL185884C (nl)	1996-01-23	Halfgeleiderinrichting.
NL159822B (nl)	1979-03-15	Halfgeleiderinrichting.
NL7604903A (nl)	1976-11-12	Chipverbindingsinrichting.
NL7709931A (nl)	1978-03-14	Halfgeleider-geheugeninrichting.
NL161923C (nl)	1980-03-17	Halfgeleiderinrichting.
NL190211C (nl)	1993-12-01	Dynamische halfgeleidergeheugeninrichting.
NO143441C (no)	1981-02-11	Large scale integration (l.s.i.) skivepakke og fremgangsmaate for fremstilling av denne
NL7806294A (nl)	1978-12-12	Geintegreerde halfgeleider -geheugeninrichting.
NL7514642A (nl)	1976-06-18	Halfgeleidergeheugeninrichting.
NL7607984A (nl)	1977-01-25	Halfgeleidergeheugen.
FI51760C (fi)	1977-04-12	Käännettävissä oleva kirjoitusalusta.
CH501980A (de)	1971-01-15	Monolithische, integrierte Halbleiteranordnung
NL176405C (nl)	1985-04-01	Geintegreerde halfgeleidergeheugeninrichting.
JPS5254384A (en)	1977-05-02	Semiconductor memory device
NL177364C (nl)	1985-09-02	Halfgeleiderinrichting.
NL7614307A (nl)	1977-06-28	Halfgeleider inrichting.
NL7604045A (nl)	1976-10-20	Halfgeleider-geheugenorgaan.
NL7807820A (nl)	1979-01-24	Halfgeleider-geheugeninrichting.
NL7604289A (nl)	1976-11-01	Halfgeleider-inrichting.
NL7611109A (nl)	1977-04-19	Leesinrichting.
JPS5213736A (en)	1977-02-02	Semiconductor memory device
NL167813C (nl)	1982-01-18	Tweetraps-transistorversterker.