JPS5245279A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5245279A
JPS5245279A JP12116375A JP12116375A JPS5245279A JP S5245279 A JPS5245279 A JP S5245279A JP 12116375 A JP12116375 A JP 12116375A JP 12116375 A JP12116375 A JP 12116375A JP S5245279 A JPS5245279 A JP S5245279A
Authority
JP
Japan
Prior art keywords
semiconductor device
mid
transistors
make sound
semiconductor plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12116375A
Other languages
Japanese (ja)
Inventor
Kohei Ebara
Kuniki Owada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP12116375A priority Critical patent/JPS5245279A/en
Publication of JPS5245279A publication Critical patent/JPS5245279A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0927—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors comprising a P-well only in the substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Element Separation (AREA)

Abstract

PURPOSE:To make sound separation of two MID transistors in semiconductor plate.
JP12116375A 1975-10-07 1975-10-07 Semiconductor device Pending JPS5245279A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12116375A JPS5245279A (en) 1975-10-07 1975-10-07 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12116375A JPS5245279A (en) 1975-10-07 1975-10-07 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5245279A true JPS5245279A (en) 1977-04-09

Family

ID=14804390

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12116375A Pending JPS5245279A (en) 1975-10-07 1975-10-07 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5245279A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55151363A (en) * 1979-05-14 1980-11-25 Chiyou Lsi Gijutsu Kenkyu Kumiai Mos semiconductor device and fabricating method of the same
JPS57145752A (en) * 1981-03-05 1982-09-08 Fujitsu Ltd Paper feeding apparatus
US5231276A (en) * 1989-11-02 1993-07-27 Nippon Conlux Co., Ltd. System for preventing a false use of a card type recording medium and a method thereof
US5270526A (en) * 1989-11-02 1993-12-14 Nippon Conlux Co., Ltd. Card type recording medium and method of preventing a false use thereof

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55151363A (en) * 1979-05-14 1980-11-25 Chiyou Lsi Gijutsu Kenkyu Kumiai Mos semiconductor device and fabricating method of the same
JPS57145752A (en) * 1981-03-05 1982-09-08 Fujitsu Ltd Paper feeding apparatus
US5231276A (en) * 1989-11-02 1993-07-27 Nippon Conlux Co., Ltd. System for preventing a false use of a card type recording medium and a method thereof
US5270526A (en) * 1989-11-02 1993-12-14 Nippon Conlux Co., Ltd. Card type recording medium and method of preventing a false use thereof

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